Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

2007 ◽  
Vol 1044 ◽  
Author(s):  
Aurelie Gueguen ◽  
Pierre Ferdinand Poudeu Poudeu ◽  
Robert Pcionek ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
...  

AbstractThe thermoelectric properties of materials with compositions NaPb18-xSnxMTe20 (M=Sb, Bi, x=0, 3, 5, 9, 13, 16 and 18) were investigated in the temperature range 300-670K. All compositions exhibited p-type behavior over the measured temperature range. Electronic properties and transport were tuned through the manipulation of the Pb/Sn ratio. Increasing the Sn fraction results in an increase in electrical conductivity and a decrease in thermopower. The compositions NaPb13Sn5SbTe20 and NaPb9Sn9SbTe20 show a lattice thermal conductivity of ∼1 W/m/K at room temperature.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Julio E. Rodríguez

AbstractSeebeck coefficient S(T), thermal conductivity κ(T) and electrical resistivity ρ(T) measurements on polycrystalline La1.85Sr0.15CuO4-δ(LSCO) compounds grown by solid-state reaction method were carried out in the temperature range between 100 and 290K. The obtained samples were submitted to annealing processes of different duration in order to modify their oxygen stoichiometry. The Seebeck coefficient is positive over the measured temperature range and its magnitude increases with the annealing time up to reach values close to 150 µV/K. The electrical resistivity exhibits a metallic behavior, in all samples, ρ(T) takes values less than 1mΩ-cm. As the annealing time increases, the total thermal conductivity increases up to values close to 3 W/K-m. From S(T), κ(T) and ρ(T) data, the thermoelectric power factor (PF) and the dimensionless figure of merit (ZT) were determined. These parameters reach maximum values around 25 µW/K2-cm and 0.18, respectively. The observed behavior in the transport properties become these compounds potential thermoelectric materials, which could be used in low temperature thermoelectric applications.


2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.


2021 ◽  
Author(s):  
Bo Feng

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.


2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.


2013 ◽  
Vol 1490 ◽  
pp. 3-8 ◽  
Author(s):  
Dimas S. Alfaruq ◽  
James Eilertsen ◽  
Philipp Thiel ◽  
Myriam H Aguirre ◽  
Eugenio Otal ◽  
...  

AbstractThe thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.


2010 ◽  
Vol 650 ◽  
pp. 137-141
Author(s):  
Qing Sen Meng ◽  
Wen Hao Fan ◽  
L.Q. Wang ◽  
L.Z. Ding

Iron disilicide (-FeSi2, and -FeSi2+Cu0.1wt%) were prepared by a field-activated pressure assisted synthesis(FAPAS) method from elemental powders and the thermoelectric properties were investigated. The average grain size of these products is about 0.3m. The thermal conductivity of these materials is 3-4wm-1K-1in the temperature range 300-725K. These products’ figure of merit is 28.50×10-4 in the temperature range 330-450K. The additions of Cu promote the phase transformation of -Fe2Si5 + -FeSi → β-FeSi2 and shorten the annealing time. It is proved that FAPAS is a benign and rapid process for sintering of -FeSi2 thermoelectric materials.


2011 ◽  
Vol 1314 ◽  
Author(s):  
Takashi Itoh ◽  
Masashi Tachikawa

ABSTRACTCobalt triantimonide compounds are well known as materials with good thermoelectric properties over temperature range of 550-900 K. For further improving thermoelectric performance, reduction of thermal conductivity is required. In this study, we attempted to disperse carbon nanotubes (CNTs) homogeneously into the n-type CoSb3 compound for lowering lattice thermal conductivity by the phonon scattering. Powders of Co, Ni, Sb and Te were blended with molar ratios of n-type Co0.92Ni0.08Sb2.96Te0.04 compound, and the compound was synthesized through a pulse discharge sintering (PDS) process. After coarsely grinding the synthesized compound, CNTs were mixed with the compound powder at different mass% (0, 0.01, 0.05 and 0.1 mass%). Then, the mixture was mechanically ground with a planetary ball milling equipment. The ground composite powder was compacted and sintered by PDS. Thermoelectric properties (Seebeck coefficient, electrical resistivity and thermal conductivity) of the sintered samples were measured. It was confirmed that the fibrous CNTs existed homogeneously in the compound matrix. The absolute value of Seebeck coefficient slightly decreased with increase of CNT content. The minimum thermal conductivity was obtained at addition of 0.01mass%CNT, and the electrical resistivity was a little increased with CNT content. The maximum ZT of 0.98 was achieved at 853 K in the 0.01mass%CNT-added sample.


1984 ◽  
Vol 39 ◽  
Author(s):  
R. K. Williams ◽  
R. S. Graves ◽  
F. J. Weaver ◽  
D. L. McElroy

ABSTRACTThermal conductivity, electrical resistivity, Seebeck coefficient and thermal expansion data were obtained on well-annealed Ni3Al containing 24 and 25 at. % Al. The results span the temperature range 300 to 1000 K. The expansion coefficients did not vary with composition and increased with temperature, reaching values of aIout 17 × 10−6 K−1 at 1000 K. The thermal conductivity and electrical resistivity changed rapidly with composition, and the thermal conductivity of 24 at. % Al is as much as 30% lower than that for stoichiometric Ni3A1. The electronic Lorenz function of Ni3Al was obtained by subtracting the estimated phonon conductivity component and found to be within about 5% of the Sommerfeld prediction from 300 to 1000 K. The electrical resistivity results for stoichiometric Ni 3Al are influenced by the loss of ferromagnetic order at lower temperatures and are not adequately described by the Bloch-Grüneisen equation.


2016 ◽  
Vol 09 (01) ◽  
pp. 1650008 ◽  
Author(s):  
Le Deng ◽  
Li Bin Wang ◽  
Jie Ming Qin ◽  
Xiao Peng Jia ◽  
Hong An Ma

We prepared InxPbxCo4Sb[Formula: see text] by high-pressure and high-temperature (HPHT) method. Samples were characterized by X-ray diffraction (XRD), electron microprobe analysis and thermoelectric properties measurements. The Seebeck coefficient, electrical resistivity and thermal conductivity of InxPbxCo4Sb[Formula: see text] samples were all performed in the temperature range of 323–723[Formula: see text]K. With the increasing synthetic pressure, the Seebeck coefficient of In[Formula: see text]Pb[Formula: see text]Co4Sb[Formula: see text] samples, which synthesized between 1.5 GPa–2.3 GPa, showed an obvious increase while the thermal conductivity exhibited a substantial reduction.


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