scholarly journals Analysis and design of parallel-coupled high-gradient structure for ultrashort input power pulses

2021 ◽  
Vol 24 (11) ◽  
Author(s):  
Yuliang Jiang ◽  
Jiaru Shi ◽  
Hao Zha ◽  
Jiayang Liu ◽  
Xiancai Lin ◽  
...  
Keyword(s):  
Input Power ◽  
Gradient Structure ◽  
High Gradient ◽  
Analysis And Design

Analysis and Design of a Novel High-Power W-Band Spatial Multilayer Doubler

2011 ◽  
Vol 130-134 ◽  
pp. 529-533
Author(s):  
Jian Qin Deng ◽  
Wan Shun Jiang ◽  
Yue Min Ning
Keyword(s):  
Rectangular Waveguide ◽  
Fdtd Method ◽  
Single Layer ◽  
Input Power ◽  
Analysis And Design ◽  
Passive Circuits ◽  
W Band ◽  
Rectangular Waveguides ◽  
Planar Circuit ◽  
Harmonic Power

A novel spatial multilayer doubler is proposed in the paper. It is designed by tray approach in rectangular waveguide. The doubler consists of multilayer multiplier circuits, which are parallel each other. Comparing with traditional single layer doubler, the spatial multilayer doubler has higher 1dB compression point, so the output power can be increased when input power is increased. Both the input port and the output port of the doubler are rectangular waveguides. In order to achieve the transition from rectangular waveguide to planar circuit, the finline and ridge are used. Multilayer finlines act as divider, which couple power from input rectangular waveguide. Otherwise, multilayer ridges act as combiner, which combine the harmonic power to output rectangular waveguider. The passive circuits of the spatial multilayer doubler are modeled and analyzed with FDTD method. From the results, we can see that the passive circuits designed in the paper have very low insertion loss.

scholarly journals Analysis and Design of Transformer-Based mm-Wave Transmit/Receive Switches

2012 ◽  
Vol 2012 ◽  
pp. 1-11 ◽  
Author(s):  
Ehsan Adabi ◽  
Ali M. Niknejad
Keyword(s):  
Insertion Loss ◽  
Input Power ◽  
Active Area ◽  
Cmos Process ◽  
Large Signal ◽  
Digital Cmos ◽  
Analysis And Design ◽  
Wave Transformer

Transformer-based shunt single pole, double-throw (SPDT) switches are analyzed, and design equations are provided. A mm-wave transformer-based SPDT shunt switch prototype was designed and fabricated in 90 nm digital CMOS process. It has a minimum insertion loss of 3.4 dB at 50 GHz from the single pole to the ON-thru port and a leakage of 19 dB from the single pole to the OFF-thru port. The isolation is 13.7 dB between the two thru ports. Large signal measurements verify that the switch is capable of handling +14 dBm of input power at its 1 dB compression point. The fabricated SPDT switch has a minute active area size of 60 μm×60 μm.

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