scholarly journals “Not- A ”, representation symmetry-protected topological, and Potts phases in an S3 -invariant chain

2020 ◽  
Vol 101 (23) ◽  
Author(s):  
Edward O'Brien ◽  
Eric Vernier ◽  
Paul Fendley
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. X. M. Riberolles ◽  
T. V. Trevisan ◽  
B. Kuthanazhi ◽  
T. W. Heitmann ◽  
F. Ye ◽  
...  

AbstractKnowledge of magnetic symmetry is vital for exploiting nontrivial surface states of magnetic topological materials. EuIn2As2 is an excellent example, as it is predicted to have collinear antiferromagnetic order where the magnetic moment direction determines either a topological-crystalline-insulator phase supporting axion electrodynamics or a higher-order-topological-insulator phase with chiral hinge states. Here, we use neutron diffraction, symmetry analysis, and density functional theory results to demonstrate that EuIn2As2 actually exhibits low-symmetry helical antiferromagnetic order which makes it a stoichiometric magnetic topological-crystalline axion insulator protected by the combination of a 180∘ rotation and time-reversal symmetries: $${C}_{2}\times {\mathcal{T}}={2}^{\prime}$$ C 2 × T = 2 ′ . Surfaces protected by $${2}^{\prime}$$ 2 ′ are expected to have an exotic gapless Dirac cone which is unpinned to specific crystal momenta. All other surfaces have gapped Dirac cones and exhibit half-integer quantum anomalous Hall conductivity. We predict that the direction of a modest applied magnetic field of μ0H ≈ 1 to 2 T can tune between gapless and gapped surface states.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Libo Zhang ◽  
Zhiqingzi Chen ◽  
Kaixuan Zhang ◽  
Lin Wang ◽  
Huang Xu ◽  
...  

AbstractThe advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging.


2021 ◽  
Vol 103 (24) ◽  
Author(s):  
Jian Yang ◽  
Chen Fang ◽  
Zheng-Xin Liu

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