scholarly journals Analytical representation of the local field correction of the uniform electron gas within the effective static approximation

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
Tobias Dornheim ◽  
Zhandos A. Moldabekov ◽  
Panagiotis Tolias
1998 ◽  
Vol 57 (19) ◽  
pp. 12056-12068 ◽  
Author(s):  
Jener J. S. Brito

2015 ◽  
Vol 18 (3) ◽  
pp. 85-92
Author(s):  
Tai Van Vo ◽  
Khanh Quoc Nguyen

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.


Sign in / Sign up

Export Citation Format

Share Document