Transport properties and seebeck coefficient of the quasi-twodimensional electron gas in ALP quantum wells

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.

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MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD

International Journal of Modern Physics B ◽

10.1142/s0217979207043142 ◽

2007 ◽

Vol 21 (08n09) ◽

pp. 1529-1534 ◽

Cited By ~ 6

Author(s):

A. GOLD ◽

O. ANTONIE

Keyword(s):

Magnetic Field ◽

Electron Gas ◽

Impurity Scattering ◽

Interface Roughness ◽

Zero Temperature ◽

Parallel Magnetic Field ◽

Interface Roughness Scattering ◽

Dimensional Electron Gas ◽

Passivated Silicon ◽

Theoretical Results

In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.

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The scattering time of electrons in a GaAs/InGaAs/GaAs quantum well including temperature and exchange-correlation effects

Science and Technology Development Journal - Natural Sciences ◽

10.32508/stdjns.v3i3.638 ◽

2020 ◽

Vol 3 (3) ◽

Author(s):

Truong Van Tuan ◽

Nguyen Quoc Khanh ◽

Vo Van Tai

Keyword(s):

Surface Roughness ◽

Relaxation Time ◽

Quantum Well ◽

Impurity Scattering ◽

Correlation Effects ◽

Charged Impurity ◽

Exchange Correlation ◽

Local Field Correction ◽

Quantum Well Width ◽

Charged Impurity Scattering

The ratio of the scattering and single-particle relaxation time of a quasi-two-dimensional electron gas (Q2DEG) in a finite lattice-mismatched GaAs/InGaAs/GaAs quantum well was investigate at zero and finite temperatures, taking into account the exchange-correlation effects via a local-field correction with three approximations for the LFC, G = 0, GH, and GGA. We studied the dependence of the surface roughness, roughness-induced piezoelectric, remote and homogenous background charged impurity scattering on the carrier density and quantum well width. In the case of zero temperature and Hubbard local-field correction our results reduced to those of different theoretical calculations. At low density, the exchange-correlation effects depend strongly on the ratio τt/τs. While at high density many-body effects due to exchange and correlation considerably modified the ratio of the scattering and single-particle relaxation time. We found that, for densities and temperatures considered T = 0,3TF in this study, the temperature affected weakly on the time ratio for four scatterings. Furthermore, with the change of quantum well width, the effect of LFC and temperatures act on the ratio τt/τs are negligible for the roughness-induced piezoelectric and remote charged impurity scattering, and are notable for the surface roughness and homogenous background charged impurity scattering.

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Interplay between quantum well width and interface roughness for electron transport mobility in GaAs quantum wells

Applied Physics Letters ◽

10.1063/1.4971824 ◽

2016 ◽

Vol 109 (23) ◽

pp. 232105 ◽

Cited By ~ 6

Author(s):

D. Kamburov ◽

K. W. Baldwin ◽

K. W. West ◽

M. Shayegan ◽

L. N. Pfeiffer

Keyword(s):

Electron Transport ◽

Quantum Well ◽

Quantum Wells ◽

Interface Roughness ◽

Quantum Well Width ◽

Transport Mobility

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Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects

Communications in Physics ◽

10.15625/0868-3166/30/2/14446 ◽

2020 ◽

Vol 30 (2) ◽

pp. 123

Author(s):

Van Tuan Truong ◽

Quoc Khanh Nguyen ◽

Van Tai Vo ◽

Khan Linh Dang

Keyword(s):

Magnetic Field ◽

Quantum Well ◽

Transport Properties ◽

Local Field ◽

Impurity Scattering ◽

Many Body ◽

Charged Impurity ◽

Local Field Correction ◽

Many Body Effects ◽

Dimensional Electron Gas

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

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Effect of Singwi–Tosi–Land–Sjölander local field correction on spin relaxation in n-type GaAs quantum wells at low temperature

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2008.06.004 ◽

2008 ◽

Vol 41 (1) ◽

pp. 50-53 ◽

Cited By ~ 1

Author(s):

J. Zhou

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Spin Relaxation ◽

Local Field ◽

Local Field Correction

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Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

Физика и техника полупроводников ◽

10.21883/ftp.2018.02.45445.8645 ◽

2018 ◽

Vol 52 (2) ◽

pp. 207

Author(s):

Н.В. Павлов ◽

Г.Г. Зегря ◽

А.Г. Зегря ◽

В.Е. Бугров

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Incident Radiation ◽

Radiation Absorption ◽

Hole Density ◽

Internal Radiation ◽

Radiation Losses ◽

Semiconductor Quantum Wells ◽

Quantum Well Width ◽

Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

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Local-field correction for the ferromagnetic electron gas

Physical Review B ◽

10.1103/physrevb.57.12056 ◽

1998 ◽

Vol 57 (19) ◽

pp. 12056-12068 ◽

Cited By ~ 1

Author(s):

Jener J. S. Brito

Keyword(s):

Local Field ◽

Electron Gas ◽

Local Field Correction

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THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

International Journal of Modern Physics B ◽

10.1142/s021797920503222x ◽

2005 ◽

Vol 19 (21) ◽

pp. 3353-3377 ◽

Cited By ~ 1

Author(s):

V. A. VETTCHINKINA ◽

A. BLOM ◽

M. A. ODNOBLYUDOV

Keyword(s):

Monte Carlo ◽

Quantum Wells ◽

Electric Fields ◽

Carrier Transport ◽

Impurity Scattering ◽

Resonant Scattering ◽

Interface Roughness ◽

The Monte Carlo Method ◽

Analytic Expressions ◽

Different Temperatures

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

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TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004321 ◽

2007 ◽

Vol 17 (01) ◽

pp. 115-120

Author(s):

N. Sustersic ◽

S. Kim ◽

P.-C. Lv ◽

M. Coppinger ◽

T. Troeger ◽

...

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Silicon Germanium ◽

Heavy Hole ◽

Light Hole ◽

Spectral Lines ◽

Intersubband Transitions ◽

Terahertz Emission ◽

Drive Current ◽

Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

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