Static local-field correction from Monte Carlo studies of the homogeneous electron gas

2003 ◽  
Vol 68 (9) ◽  
Author(s):  
Slimane Hellal ◽  
Jean-Georges Gasser ◽  
Arezki Issolah
1998 ◽  
Vol 57 (19) ◽  
pp. 12056-12068 ◽  
Author(s):  
Jener J. S. Brito

2015 ◽  
Vol 18 (3) ◽  
pp. 85-92
Author(s):  
Tai Van Vo ◽  
Khanh Quoc Nguyen

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.


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