Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

ABSTRACTGraphene is a promising material for electronic and spintronic applications due to its high carrier mobility and low intrinsic spin-orbit interaction. However, extrinsic effects may easily dominate intrinsic scattering mechanisms. The scattering mechanisms investigated here are associated non-magnetic, charged impurities in the substrate (e.g. SiO2) beneath the graphene layer. Such impurities cause an electric field that extends through the graphene and has a non-vanishing perpendicular component. Consequently, the impurity, in addition to the conventional elastic, spin-conserving scattering can give rise to spin-flip processes. The latter is a consequence of a spatially varying Rashba spin-orbit interaction caused by the electric field of the impurity in the substrate. Scattering cross-sections are calculated and, for assumed impurity distributions, relaxation times are estimated.

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Pseudopotential Band Calculations along a High-Symmetry Axis. Part 2. Spin-Orbit Interaction and the (111) Direction

10.21236/ada252397 ◽

1991 ◽

Author(s):

D. Y. Agassi ◽

J. B. Restorff

Keyword(s):

Symmetry Axis ◽

Orbit Interaction ◽

High Symmetry ◽

Spin Orbit ◽

Spin Orbit Interaction

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Spin generation and manipulation based on spin-orbit interaction in semiconductors

10.1093/oso/9780198787075.003.0013 ◽

2017 ◽

Author(s):

J. Nitta

Keyword(s):

Magnetic Field ◽

Orbit Interaction ◽

Degree Of Freedom ◽

Effective Magnetic Field ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Spin Degree ◽

Dimensional Electron Gas ◽

Spin Orbit Interactions ◽

Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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Dirac nodal lines protected against spin-orbit interaction in IrO2

Physical Review Materials ◽

10.1103/physrevmaterials.3.064205 ◽

2019 ◽

Vol 3 (6) ◽

Cited By ~ 5

Author(s):

J. N. Nelson ◽

J. P. Ruf ◽

Y. Lee ◽

C. Zeledon ◽

J. K. Kawasaki ◽

...

Keyword(s):

Orbit Interaction ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Nodal Lines

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Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

npj 2D Materials and Applications ◽

10.1038/s41699-020-00184-y ◽

2021 ◽

Vol 5 (1) ◽

Author(s):

Yuanjie Chen ◽

Shaoyun Huang ◽

Dong Pan ◽

Jianhong Xue ◽

Li Zhang ◽

...

Keyword(s):

Layer Structure ◽

Orbit Interaction ◽

Spin Orbit ◽

Device Layer ◽

Physical Origin ◽

Quantum Devices ◽

Spin Orbit Interaction ◽

Topological Quantum ◽

Narrow Bandgap ◽

Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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