scholarly journals Geometric origins of topological insulation in twisted layered semiconductors

2021 ◽  
Vol 104 (15) ◽  
Author(s):  
Hao Tang ◽  
Stephen Carr ◽  
Efthimios Kaxiras
1981 ◽  
Vol 20 (S3) ◽  
pp. 255 ◽  
Author(s):  
Haruo Shimizu ◽  
Masayoshi Yamada ◽  
Shigeto Maegawa ◽  
Keiichi Yamamoto ◽  
Kenji Abe

1997 ◽  
Vol 56 (19) ◽  
pp. 12092-12095 ◽  
Author(s):  
Armin Rettenberger ◽  
Paul Leiderer ◽  
Matthias Probst ◽  
Richard Haight

Nanoscale ◽  
2021 ◽  
Author(s):  
Dan-Dong Wang ◽  
Xin-Gao Gong ◽  
Jihui Yang

Interlayer interactions play important roles in manipulating the electronic properties of layered semiconductors. One common mechanism is that the valance band maximum (VBM) and the conduction band minimum (CBM) in...


1979 ◽  
Vol 126 (7) ◽  
pp. 1191-1202 ◽  
Author(s):  
A. Moritani ◽  
H. Kubo ◽  
J. Nakai

Sign in / Sign up

Export Citation Format

Share Document