Effects of topological band structure on thermoelectric transport of bismuthene

ABSTRACTWe present here a thermoelectric transport property study of Bi1−xSbx alloy nanowires embedded in a dielectric matrix. Temperature-dependent resistance measurements exhibit nonmonotonic trends as the antimony mole fraction (x) increases, and a theoretical model is presented to explain the features that are related to the unusual band structure of Bi1−xSbx systems. Seebeck coefficient measurements are performed on nanowires with different diameters and compositions, showing enhanced thermopower over bulk Bi. The magneto-Seebeck coefficient of these nanowires also exhibits an unusual field dependence that is absent in bulk samples.

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Electronic Band Structure Engineering and Enhanced Thermoelectric Transport Properties in Pb-Doped BiCuOS Oxysulfide

Chemistry of Materials ◽

10.1021/acs.chemmater.7b04989 ◽

2018 ◽

Vol 30 (3) ◽

pp. 1085-1094 ◽

Cited By ~ 7

Author(s):

Jean-Baptiste Labégorre ◽

Rabih Al Rahal Al Orabi ◽

Agathe Virfeu ◽

Jacinthe Gamon ◽

Philippe Barboux ◽

...

Keyword(s):

Band Structure ◽

Transport Properties ◽

Electronic Band Structure ◽

Electronic Band ◽

Thermoelectric Transport ◽

Thermoelectric Transport Properties ◽

Structure Engineering

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Landauer-Datta-Lundstrom Generalized Transport Model for Nanoelectronics

Journal of Nanoscience ◽

10.1155/2014/725420 ◽

2014 ◽

Vol 2014 ◽

pp. 1-15 ◽

Cited By ~ 4

Author(s):

Yuriy Kruglyak

Keyword(s):

Electron Transport ◽

Band Structure ◽

Free Path ◽

Power Law ◽

Linear Response ◽

Transport Model ◽

Transport Coefficients ◽

Mean Free Path ◽

Linear Dispersion ◽

Thermoelectric Transport

The Landauer-Datta-Lundstrom electron transport model is briefly summarized. If a band structure is given, the number of conduction modes can be evaluated and if a model for a mean-free-path for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated using the final expressions listed below for 1D, 2D, and 3D resistors in ballistic, quasiballistic, and diffusive linear response regimes when there are differences in both voltage and temperature across the device. The final expressions of thermoelectric transport coefficients through the Fermi-Dirac integrals are collected for 1D, 2D, and 3D semiconductors with parabolic band structure and for 2D graphene linear dispersion in ballistic and diffusive regimes with the power law scattering.

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