Theoretical study of native defects and impurities in InP

AbstractThe results of an extensive theoretical study of native defects in GaN and of vacancies in AlN are presented. We have considered cation and anion vacancies, antisites, and intersti-tials. The computations were carried out using quantum molecular dynamics, in supercells containing 72 atoms. Due to the wide gap of nitrides, the formation energies of defects depend strongly on the position of the Fermi level. The N vacancy in GaN introduces a shallow donor level that may be responsible for the n-type character of as-grown GaN.Other defects introduce deep states in the gap, with strongly localized wave functions.

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Impact of native defects and impurities in m−HfO2and β−Si3N4on charge trapping memory devices: A first principle hybrid functional study

physica status solidi (b) ◽

10.1002/pssb.201600360 ◽

2016 ◽

Vol 254 (2) ◽

pp. 1600360 ◽

Cited By ~ 5

Author(s):

Wenjuan Lu ◽

Yuehua Dai ◽

Feifei Wang ◽

Bo Jin

Keyword(s):

Charge Trapping ◽

Functional Study ◽

Memory Devices ◽

First Principle ◽

Hybrid Functional ◽

Native Defects ◽

Defects And Impurities ◽

Charge Trapping Memory

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Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

Physical Review B ◽

10.1103/physrevb.61.r7846 ◽

2000 ◽

Vol 61 (12) ◽

pp. R7846-R7849 ◽

Cited By ~ 193

Author(s):

C. Stampfl ◽

C. G. Van de Walle ◽

D. Vogel ◽

P. Krüger ◽

J. Pollmann

Keyword(s):

First Principles ◽

Local Density Approximation ◽

Local Density ◽

Density Approximation ◽

Native Defects ◽

Defects And Impurities

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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Materials Science-Poland ◽

10.1515/msp-2016-0126 ◽

2016 ◽

Vol 34 (4) ◽

pp. 726-734 ◽

Cited By ~ 6

Author(s):

Łukasz Gelczuk ◽

Maria Dąbrowska-Szata ◽

Beata Ściana ◽

Damian Pucicki ◽

Damian Radziewicz ◽

...

Keyword(s):

Atmospheric Pressure ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electrical Parameters ◽

Native Defects ◽

Three Samples ◽

Nitrogen Concentrations ◽

Defects And Impurities ◽

Transient Spectroscopy

AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

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