Investigation of native defects and impurities in X-N (X = Al, Ga, In)

2020 ◽  
pp. 110169
Author(s):  
Yingjie Chen ◽  
Liyuan Wu ◽  
Dan Liang ◽  
Pengfei Lu ◽  
Jianjun Wang ◽  
...  
Keyword(s):  
Native Defects ◽  
Defects And Impurities

scholarly journals Fast Diffusion of Native Defects and Impurities in Perovskite Solar Cell Material CH3NH3PbI3

2016 ◽  
Vol 28 (12) ◽  
pp. 4349-4357 ◽  
Author(s):  
Dongwen Yang ◽  
Wenmei Ming ◽  
Hongliang Shi ◽  
Lijun Zhang ◽  
Mao-Hua Du
Keyword(s):  
Solar Cell ◽  
Perovskite Solar Cell ◽  
Fast Diffusion ◽  
Native Defects ◽  
Cell Material ◽  
Defects And Impurities ◽  
Solar Cell Material

scholarly journals Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

2016 ◽  
Vol 34 (4) ◽  
pp. 726-734 ◽  
Author(s):  
Łukasz Gelczuk ◽  
Maria Dąbrowska-Szata ◽  
Beata Ściana ◽  
Damian Pucicki ◽  
Damian Radziewicz ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Parameters ◽  
Native Defects ◽  
Three Samples ◽  
Nitrogen Concentrations ◽  
Defects And Impurities ◽  
Transient Spectroscopy

AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

Theory of Carbon-Vacancy Diffusion at the SiO2/4H-SiC Interface

2019 ◽  
Vol 963 ◽  
pp. 204-207
Author(s):  
Hind Alsnani ◽  
J.P. Goss ◽  
Patrick R. Briddon ◽  
Mark J. Rayson ◽  
Alton B. Horsfall
Keyword(s):  
Field Effect ◽  
Density Functional ◽  
Carrier Lifetime ◽  
Field Effect Transistors ◽  
Active Regions ◽  
Vacancy Diffusion ◽  
Functional Theory ◽  
Native Defects ◽  
Carbon Vacancy ◽  
Defects And Impurities

Experimental data indicate that carbon vacancies incorporated in active regions of SiC devices are important electrical defects, responsible for device limiting effects such as carrier lifetime reduction. For field-effect transistors that include a 4H-SiC/SiO2 interface, such as at the gate, the oxidation pro- cess is understood to introduce native defects to the SiC, including injection of carbon self-interstitials and vacancies, that diffuse into the active layer and interact with other defects and impurities. It is therefore important to understand the migration behaviour of primary native defects such as VC in the vicinity of 4H-SiC/SiO2 interfaces. We report here the results of a density-functional theory investi- gation into the diffusion of the carbon vacancy in such a region. We conclude that the migration of VC is significantly hindered in the immediate vicinity of the interface, with the energy of diffusion barrier being approximately 15% greater than the corresponding diffusion in bulk 4H-SiC.

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