Application of a transient-hot-electron-transport Green’s-function approach to a two-dimensional model of a GaAs/AlxGa1−xAs heterojunction

1991 ◽  
Vol 44 (7) ◽  
pp. 3125-3132 ◽  
Author(s):  
Javier E. Hasbun ◽  
Tsu W. Nee
Keyword(s):  
Electron Transport ◽  
Green’S Function ◽  
Green's Function ◽  
Function Approach ◽  
Two Dimensional ◽  
Hot Electron ◽  
Dimensional Model ◽  
Two Dimensional Model ◽  
Hot Electron Transport

Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors

1991 ◽  
Vol 240 ◽  
Author(s):  
K. A. Mäder ◽  
A. Baldereschi
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Green’S Function ◽  
Electronic Properties ◽  
Green's Function ◽  
Tight Binding ◽  
Function Approach ◽  
Diamond Structure ◽  
Two Dimensional ◽  
Host Materials

ABSTRACTAn empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.

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