Theoretical model for early stages of porous silicon formationfrom n- and p-type silicon substrates

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

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Self-organization of highly ordered mosaic structure of porous silicon at long anodic etching of p-type silicon in the electrolyte with internal current source

2011 International Conference on Multimedia Technology ◽

10.1109/icmt.2011.6002582 ◽

2011 ◽

Cited By ~ 1

Author(s):

Kurbangali B. Tynyshtykbaev

Keyword(s):

Porous Silicon ◽

Current Source ◽

Mosaic Structure ◽

Self Organization ◽

Anodic Etching ◽

Type Silicon ◽

P Type

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ESR Study of Porous Silicon

MRS Proceedings ◽

10.1557/proc-283-155 ◽

1992 ◽

Vol 283 ◽

Cited By ~ 8

Author(s):

W. Y. Cheung ◽

S. P. Wong ◽

I. H. Wilson ◽

C. F. Kan ◽

S. K. Hark

Keyword(s):

Porous Silicon ◽

Spin Density ◽

Light Emission ◽

Blue Shift ◽

Esr Spectra ◽

Peak Position ◽

Silicon Substrates ◽

Post Annealing ◽

G Value ◽

P Type

ABSTRACTA detailed ESR study has been performed on porous silicon on both <100> and <111> p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the light emission properties. It is found that the ESR spectra are dependent upon the orientation of the samples. The ESR defect centers are identified to be the Pb centers or Pbo centers of the Si-SiO2 system from the g-value anisotropy maps. The variation of the spin density Ns with annealing conditions has also been studied for samples annealed either in nitrogen or oxygen ambient at 200°C for various time intervals. It is concluded that the increase or decrease of Ns are due to the generation or elimination of the Pb or Pbo centers in conjunction with the oxidation process during annealing. From PL study of these samples, it is found that there is no simple correlation between the spin density and the PL intensity. However, a blue shift in the PL peak position was observed both in samples after a post-annealing etch in HF solution, and in samples annealed in oxygen without a post-annealing etch. This blue shift supports the quantum confinement model of light emission from porous silicon.

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Characterization of Ultra-Shallow Implanted P+ Layer on P-Type Silicon Substrates after Flash Anneal and Conventional Rapid Thermal Anneal

ECS Meeting Abstracts ◽

10.1149/ma2005-01/14/648 ◽

2005 ◽

Keyword(s):

Silicon Substrates ◽

Rapid Thermal Anneal ◽

Type Silicon ◽

P Type

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FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

PROGRESS IN DETONATION RESEARCH ◽

10.30826/icpcd12a15 ◽

2020 ◽

Author(s):

V. N. MIRONOV ◽

◽

O. G. PENYAZKOV ◽

P. N. KRIVOSHEYEV ◽

Y. A. BARANYSHYN ◽

...

Keyword(s):

Porous Silicon ◽

Solid Fuel ◽

Type Silicon ◽

Oxidative Reactions ◽

P Type ◽

Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

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