scholarly journals Characterization of Ultra-Shallow Implanted P+ Layer on P-Type Silicon Substrates after Flash Anneal and Conventional Rapid Thermal Anneal

2005 ◽  
Keyword(s):  
Silicon Substrates ◽  
Rapid Thermal Anneal ◽  
Type Silicon ◽  
P Type

Optical characterization of Ba0.5Sr0.5TiO3 material grown on a p-type silicon substrate (111) doped niobium oxide and chlorophyll

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman
Keyword(s):  
Silicon Substrate ◽  
Niobium Oxide ◽  
Optical Characterization ◽  
Type Silicon ◽  
P Type

Electronic Characterization of Defects in Iron-Doped P-Type Silicon

1991 ◽  
Vol 38-41 ◽  
pp. 373-378 ◽  
Author(s):  
W. Gehlhoff ◽  
K. Irmscher ◽  
U. Rehse
Keyword(s):  
Type Silicon ◽  
Iron Doped ◽  
P Type

Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer

2018 ◽  
Vol 148 ◽  
pp. 35-42 ◽  
Author(s):  
Jung Gyu Jung ◽  
Kisang Lee ◽  
Boyoung Lee ◽  
Ho Seong Lee
Keyword(s):  
Silicon Wafer ◽  
Vertical Direction ◽  
Type Silicon ◽  
P Type

Characterization of a Rapid Thermal Annealed TiNxOy/TiSi2 Barrier Layer

1990 ◽  
Vol 181 ◽  
Author(s):  
Sailesh Chittipeddi ◽  
Michael J. Kelly ◽  
Charles M. Dziuba ◽  
Anthony S. Oates ◽  
William T. Cochran
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Cmos Technology ◽  
Nitrogen Atmosphere ◽  
Titanium Film ◽  
Rapid Thermal Anneal ◽  
Tem Analysis ◽  
P Type

ABSTRACTIn this paper we characterize the thin film formed by rapid thermal anneal of a magnetron sputtered titanium film in a nitrogen atmosphere. The barrier properties of this material have been characterized for both n- and p-type junctions in our CMOS technology. We have characterized the physical properties of the film using Auger, RBS and TEM analysis in the same range of temperatures, and find that as the annealing temperature is increased a better quality TiNxOy film is formed. The electromigration characteristics for Aℓ/TiNxOy/TiSi2 runners, as well as the role that this system plays in minimizing failures due to stress induced voiding are examined in this study.

Photodefined etching of n+ layers diffused on p-type silicon substrates

1999 ◽  
Vol 138-139 ◽  
pp. 29-34
Author(s):  
R.S Videira ◽  
R.M Gamboa ◽  
J.Maia Alves ◽  
J.M Serra ◽  
A.M Vallera
Keyword(s):  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

2013 ◽  
Vol 48 (11) ◽  
pp. 4596-4600 ◽  
Author(s):  
Vinod Kumar ◽  
Neetu Singh ◽  
Avinashi Kapoor ◽  
Odireleng M. Ntwaeaborwa ◽  
Hendrik C. Swart
Keyword(s):  
Type Silicon ◽  
Doped Zno ◽  
Heterojunction Diodes ◽  
Fabrication And Characterization ◽  
P Type ◽  
Co Doped
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