Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

2020 ◽  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
P. N. KRIVOSHEYEV ◽  
Y. A. BARANYSHYN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Solid Fuel ◽  
Type Silicon ◽  
Oxidative Reactions ◽  
P Type ◽  
Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

Theory of Porous Silicon Injection Electroluminescence

1992 ◽  
Vol 283 ◽  
Author(s):  
H. Paul Maruska ◽  
F. Namavar ◽  
N. M. Kalkhoran
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Forward Bias ◽  
Interface States ◽  
Light Emitting ◽  
Long Term Stability ◽  
Quantum Confinement Effects ◽  
Current Path ◽  
Yellow Orange ◽  
P Type

ABSTRACTWe discuss the operation of porous silicon light-emitting diodes prepared as heterojunctions between n-type In2O3:Sn (ITO) and p-type silicon nanostructures, exhibiting quantum confinement effects. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long term stability. We describe a model for the injection of minority carrier electrons into the porous silicon regions, which results in the emission of yellow-orange DC electroluminescence. A detailed study of the forward bias current-voltage characteristics of the devices will be given, which allows calculations of the densities of interface states. A tendency to pin the hole fermi energy near the neutral level, φ0, is shown to control the extraction of majority carriers. Methods for improving LED efficiency by alleviating a parasitic shunt current path through interface states will be addressed.

Charge Exchange Mechanism Responsible for P‐Type Silicon Dissolution during Porous Silicon Formation

1989 ◽  
Vol 136 (10) ◽  
pp. 3043-3046 ◽  
Author(s):  
F. Gaspard ◽  
A. Bsiesy ◽  
M. Ligeon ◽  
F. Muller ◽  
R. Herino
Keyword(s):  
Porous Silicon ◽  
Charge Exchange ◽  
Exchange Mechanism ◽  
Type Silicon ◽  
P Type ◽  
Silicon Dissolution

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

Luminescent Colloidal SI Suspensions from Porous SI

1991 ◽  
Vol 256 ◽  
Author(s):  
Julie L. Heinrich ◽  
Corrine L. Curtis ◽  
Grace M. Credo ◽  
Karen L. Kavanagh ◽  
Michael J. Sailor
Keyword(s):  
Quantum Confinement ◽  
Methylene Chloride ◽  
Colloidal Suspensions ◽  
Porous Si ◽  
Irregular Shapes ◽  
Quantum Confinement Effects ◽  
Transmission Electron ◽  
Si Nanoparticles ◽  
Si Films ◽  
P Type

ABSTRACTA procedure for generating colloidal suspensions of Si exhibiting luminescence, attributed to quantum confinement effects, is described. Samples of n- or p-type Si, that have been electrochemically etched to form porous Si, can be ultrasonically dispersed into methylene chloride, acetonitrile, methanol, toluene, or water solvents, forming a suspension of fine Si particles that luminesce. Transmission electron microscopy analyses show the Si particles to have irregular shapes, with diameters ranging from many microns to nanometers. Luminescent, composite polystyrene/Si films can be made by the addition of polystyrene to a toluene suspension of the Si nanoparticles and casting of the resulting solution.

A study of buried channel formation in oxidized porous silicon

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57402-57411 ◽  
Author(s):  
Z. Y. Dang ◽  
D. Q. Liu ◽  
S. Azimi ◽  
M. B. H. Breese
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy ◽  
Channel Formation ◽  
Low Resistivity ◽  
Type Silicon ◽  
Buried Channel ◽  
Oxidized Porous Silicon ◽  
P Type

We have studied the formation of buried, hollow channels in oxidized porous silicon produced by a process based on focused high-energy ion irradiation of low resistivity, p-type silicon.

scholarly journals Peculiarities of pore initiation in р-type silicon during its electrochemical etching

2019 ◽  
Vol 487 (1) ◽  
pp. 32-35
Author(s):  
E. N. Abramova ◽  
A. M. Khort ◽  
A. G. Yakovenko ◽  
Yu. V. Syrov ◽  
V. N. Tsigankov ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Pore Formation ◽  
Electrochemical Etching ◽  
Formation Mechanisms ◽  
Type Silicon ◽  
P Type

Peculiarities of porous silicon layers formation during electrochemical etching of p-type silicon were studied. Principal divisions of pore formation mechanisms in n-type and p-type of silicon were demonstrated.

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