FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

2020 ◽  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
P. N. KRIVOSHEYEV ◽  
Y. A. BARANYSHYN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Solid Fuel ◽  
Type Silicon ◽  
Oxidative Reactions ◽  
P Type ◽  
Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

Charge Exchange Mechanism Responsible for P‐Type Silicon Dissolution during Porous Silicon Formation

1989 ◽  
Vol 136 (10) ◽  
pp. 3043-3046 ◽  
Author(s):  
F. Gaspard ◽  
A. Bsiesy ◽  
M. Ligeon ◽  
F. Muller ◽  
R. Herino
Keyword(s):  
Porous Silicon ◽  
Charge Exchange ◽  
Exchange Mechanism ◽  
Type Silicon ◽  
P Type ◽  
Silicon Dissolution

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

A study of buried channel formation in oxidized porous silicon

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57402-57411 ◽  
Author(s):  
Z. Y. Dang ◽  
D. Q. Liu ◽  
S. Azimi ◽  
M. B. H. Breese
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy ◽  
Channel Formation ◽  
Low Resistivity ◽  
Type Silicon ◽  
Buried Channel ◽  
Oxidized Porous Silicon ◽  
P Type

We have studied the formation of buried, hollow channels in oxidized porous silicon produced by a process based on focused high-energy ion irradiation of low resistivity, p-type silicon.

scholarly journals Peculiarities of pore initiation in р-type silicon during its electrochemical etching

2019 ◽  
Vol 487 (1) ◽  
pp. 32-35
Author(s):  
E. N. Abramova ◽  
A. M. Khort ◽  
A. G. Yakovenko ◽  
Yu. V. Syrov ◽  
V. N. Tsigankov ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Pore Formation ◽  
Electrochemical Etching ◽  
Formation Mechanisms ◽  
Type Silicon ◽  
P Type

Peculiarities of porous silicon layers formation during electrochemical etching of p-type silicon were studied. Principal divisions of pore formation mechanisms in n-type and p-type of silicon were demonstrated.

scholarly journals FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON

Doklady BGUIR ◽  
2019 ◽  
pp. 31-37
Author(s):  
A. D. Hurbo ◽  
A. V. Klimenka ◽  
V. P. Bondarenko
Keyword(s):  
Mathematical Model ◽  
Porous Silicon ◽  
Current Density ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Type Silicon ◽  
Effective Valence ◽  
P Type ◽  
Silicon Dissolution

Porous silicon layers were formed on a p-type silicon wafers by electrochemical anodisation. Dependencies of thickness and porosity of porous silicon layers as well as effective valence of silicon dissolution versus anodizing time and current density were obtained and analysed. A mathematical model for growth of layers of porous silicon was developed.  

The Thermal Conductivity of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
W. Lang ◽  
A. Drost ◽  
P. Steiner ◽  
H. Sandmaier
Keyword(s):  
Thermal Conductivity ◽  
Wave Propagation ◽  
Porous Silicon ◽  
Thermal Wave ◽  
Mesoporous Material ◽  
Measurement Method ◽  
Silicon Oxide ◽  
Nanoporous Material ◽  
Type Silicon ◽  
P Type

ABSTRACTThe thermal conductivity of porous silicon is measured as prepared and after oxidation. The measurement method uses thermal wave propagation in the porous film. We investigate three types of porous silicon: Nanoporous p-type silicon, nanoporous n-type silicon and mesoporous p+-type silicon. The nanoporous material shows a thermal conductivity in the region of 1.2 W/mK to 1.8 W/mK as prepared and after oxidation. This value is close to silicon oxide. The mesoporous material shows a high thermal conductivity of 80 W/mK as prepared which drops to 2.7 W/mK after oxidation.

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