Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

P. L. Hanselaer; W. H. Laflère; R. L. Van Meirhaeghe; F. Cardon

doi:10.1063/1.334265

Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

Journal of Applied Physics ◽

10.1063/1.334265 ◽

1984 ◽

Vol 56 (8) ◽

pp. 2309-2314 ◽

Cited By ~ 89

Author(s):

P. L. Hanselaer ◽

W. H. Laflère ◽

R. L. Van Meirhaeghe ◽

F. Cardon

Keyword(s):

Metal Oxide ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Current Voltage

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system

Journal of Applied Physics ◽

10.1063/1.355307 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5638-5647 ◽

Cited By ~ 33

Author(s):

Bogdan Majkusiak ◽

Andrzej Strojwas

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunnel Current ◽

Current Voltage ◽

Capacitance Voltage ◽

Semiconductor System

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.3652699 ◽

2011 ◽

Vol 99 (16) ◽

pp. 163502 ◽

Cited By ~ 10

Author(s):

T. P. O’Regan ◽

P. K. Hurley

Keyword(s):

Metal Oxide ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Cited By ~ 5

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Lightly Doped Drain

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Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

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Investigation of charging phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors using ramp current–voltage measurements

Journal of Applied Physics ◽

10.1063/1.1604459 ◽

2003 ◽

Vol 94 (6) ◽

pp. 4084-4087 ◽

Cited By ~ 33

Author(s):

V. Ioannou-Sougleridis ◽

A. G. Nassiopoulou

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Nanocrystal ◽

Current Voltage

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Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering

Applied Physics Letters ◽

10.1063/1.2093943 ◽

2005 ◽

Vol 87 (15) ◽

pp. 153510 ◽

Cited By ~ 11

Author(s):

C. W. Eng ◽

W. S. Lau ◽

D. Vigar ◽

S. S. Tan ◽

L. Chan

Keyword(s):

Metal Oxide ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Length Measurement ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Subthreshold Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Effective Channel

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Anomalous effects on the current‐voltage characteristics ofp‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K

Journal of Applied Physics ◽

10.1063/1.346579 ◽

1990 ◽

Vol 68 (4) ◽

pp. 1896-1901 ◽

Cited By ~ 40

Author(s):

A. G. Nassiopoulos ◽

D. Tsamakis ◽

E. Rocofyllou

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics

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Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures

Semiconductors ◽

10.1134/s1063782608010065 ◽

2008 ◽

Vol 42 (1) ◽

pp. 43-51 ◽

Cited By ~ 4

Author(s):

S. G. Dmitriev ◽

Yu. V. Markin

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ion Currents ◽

Peak Splitting ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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