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First-principles theory of tunneling currents in metal-oxide-semiconductor structures
Applied Physics Letters
◽
10.1063/1.2234283
◽
2006
◽
Vol 89
(3)
◽
pp. 032112
◽
Cited By ~ 9
Author(s):
X.-G. Zhang
◽
Zhong-Yi Lu
◽
Sokrates T. Pantelides
Keyword(s):
Metal Oxide
◽
First Principles
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
◽
Tunneling Currents
Download Full-text
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References
Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures
Physical Review B
◽
10.1103/physrevb.64.125306
◽
2001
◽
Vol 64
(12)
◽
Cited By ~ 37
Author(s):
Alexander A. Demkov
◽
Xiaodong Zhang
◽
D. A. Drabold
Keyword(s):
Metal Oxide
◽
First Principles
◽
Voltage Characteristic
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Current Voltage Characteristic
◽
Semiconductor Structures
◽
Current Voltage
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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures
Journal of Applied Physics
◽
10.1063/1.2963705
◽
2008
◽
Vol 104
(3)
◽
pp. 034313
◽
Cited By ~ 6
Author(s):
Gargi Chakraborty
◽
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Keyword(s):
Metal Oxide
◽
Comparative Study
◽
Silicon Dioxide
◽
Hafnium Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
◽
Tunneling Currents
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First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2high-Kgate dielectric
physica status solidi (a)
◽
10.1002/pssa.200723166
◽
2008
◽
Vol 205
(1)
◽
pp. 199-203
◽
Cited By ~ 15
Author(s):
L. F. Mao
◽
Z. O. Wang
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
First Principles
◽
Oxygen Vacancies
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures
10.21236/ada329531
◽
1997
◽
Author(s):
R. Ludeke
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
◽
Spatially Resolved
◽
Transport Studies
Download Full-text
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Applied Physics Letters
◽
10.1063/1.4907861
◽
2015
◽
Vol 106
(5)
◽
pp. 051605
◽
Cited By ~ 52
Author(s):
Shenghou Liu
◽
Shu Yang
◽
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◽
Qimeng Jiang
◽
Cheng Liu
◽
...
Keyword(s):
Metal Oxide
◽
Interfacial Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Materials Science Forum
◽
10.4028/www.scientific.net/msf.389-393.1009
◽
2002
◽
Vol 389-393
◽
pp. 1009-1012
◽
Cited By ~ 4
Author(s):
Masahito Yoshikawa
◽
Mirei Satoh
◽
Takeshi Ohshima
◽
Hisayoshi Itoh
Keyword(s):
Silicon Carbide
◽
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Electrical Characteristics
◽
Semiconductor Structures
Download Full-text
Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition
Journal of Applied Physics
◽
10.1063/1.3428492
◽
2010
◽
Vol 107
(10)
◽
pp. 106104
◽
Cited By ~ 43
Author(s):
D. Gregušová
◽
R. Stoklas
◽
Ch. Mizue
◽
Y. Hori
◽
J. Novák
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Metal Oxide
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Trap States
◽
Semiconductor Structures
◽
Layer Deposition
Download Full-text
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization
Advanced Materials Interfaces
◽
10.1002/admi.202101004
◽
2021
◽
pp. 2101004
Author(s):
José M. V. Cunha
◽
M. Alexandra Barreiros
◽
Marco A. Curado
◽
Tomás S. Lopes
◽
Kevin Oliveira
◽
...
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Characterization
◽
Semiconductor Structures
Download Full-text
Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures
Journal of Applied Physics
◽
10.1063/1.1589173
◽
2003
◽
Vol 94
(3)
◽
pp. 2046-2052
◽
Cited By ~ 4
Author(s):
M. M. A. Hakim
◽
A. Haque
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Quantum Mechanical
◽
Computationally Efficient
◽
Gate Current
◽
Semiconductor Structures
◽
Direct Tunneling
Download Full-text
A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors
Microelectronic Engineering
◽
10.1016/j.mee.2019.111086
◽
2019
◽
Vol 216
◽
pp. 111086
Author(s):
Fatimah Arofiati Noor
◽
Christoforus Bimo
◽
Ibnu Syuhada
◽
Toto Winata
◽
Khairurrijal Khairurrijal
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Compact Model
◽
Oxide Semiconductor
◽
Surrounding Gate
◽
Gate Tunneling
◽
Tunneling Currents
Download Full-text
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