scholarly journals Valence-band electronic structure of ZnSe(001) thin films: Theory and experiment

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
L. Plucinski ◽  
R. L. Johnson ◽  
A. Fleszar ◽  
W. Hanke ◽  
W. Weigand ◽  
...  
2015 ◽  
Vol 2015 ◽  
pp. 1-7
Author(s):  
Bo Yin ◽  
Chaogang Lou

The doping behavior of Cd atoms in the CuInSe2thin films and their influences on electronic structures are investigated. The doped Cd atoms replace Cu atoms and prefer to stay at the (112) surface of the thin films. They combine with Cu vacancies to form defect pairs due to low formation energy. The Cd atom does not by itself modify significantly the electronic structure of the surface, but the defect pairs have important influences. They result in a down shift of valence band maximum and form a hole barrier at the surface, which can prevent holes from reaching the surface and reduce the recombination of carriers.


2005 ◽  
Vol 71 (11) ◽  
Author(s):  
Bongjin Simon Mun ◽  
Choongman Lee ◽  
Vojislav Stamenkovic ◽  
Nenad M. Markovic ◽  
Philip N. Ross

2015 ◽  
Vol 628 ◽  
pp. 151-157 ◽  
Author(s):  
Khalid Sultan ◽  
M. Ikram ◽  
Sanjeev Gautam ◽  
Han-Koo Lee ◽  
Keun Hwa Chae ◽  
...  

1991 ◽  
Vol 185-189 ◽  
pp. 2019-2020 ◽  
Author(s):  
N. Terada ◽  
G. Zouganelis ◽  
M. Jo ◽  
M. Hirabayashi ◽  
K. Kaneko ◽  
...  

1997 ◽  
Vol 9 (14) ◽  
pp. 2955-2961 ◽  
Author(s):  
D Brown ◽  
M D Crapper ◽  
K H Bedwell ◽  
M Petty ◽  
J G Smith ◽  
...  

2011 ◽  
Vol 12 (6) ◽  
pp. 903-910 ◽  
Author(s):  
Steffen Duhm ◽  
Qian Xin ◽  
Norbert Koch ◽  
Nobuo Ueno ◽  
Satoshi Kera

2013 ◽  
Vol 42 (28) ◽  
pp. 10358 ◽  
Author(s):  
Hanqing Zhao ◽  
Jiaou Wang ◽  
Linxing Zhang ◽  
Yangchun Rong ◽  
Jun Chen ◽  
...  

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