We have measured the differential current-voltage characteristics of normal metal-NbSe3 direct
point contacts (without insulating barrier) formed along different crystallographic orientations under applied
magnetic field with different orientations. At low temperature two energy gaps, $\Delta_{p1}$ and $\Delta_{p2}$, corresponding
to the high and the low-temperature CDW were observed simultaneously as a singulanty of the excess
resistance which is attributed to an analog of Andreev reflection, in which the incident electron reflects on
the Peierls energy gap barriers with its charge unchanged. An applied magnetic field up to 8.5 T does not lead
to a change in the density of states and in the Peierls energy gaps, suggesting that the large magnetoresistance
observed in NbSe3 might not result from the change in the CDW order parameter with magnetic field but
rather from the increase of scattering of non-condensed to CDW carriers.
Andreev reflection spectroscopy of niobium point contacts in a magnetic field