Carrier density dependence of mobility in organic solids: A Monte Carlo simulation

2007 ◽  
Vol 75 (15) ◽  
Author(s):  
J. Zhou ◽  
Y. C. Zhou ◽  
J. M. Zhao ◽  
C. Q. Wu ◽  
X. M. Ding ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Density Dependence ◽  
Carrier Density ◽  
Organic Solids

Monte Carlo simulation of charge transport in electrically doped organic solids

2008 ◽  
Vol 42 (3) ◽  
pp. 035103 ◽  
Author(s):  
J Zhou ◽  
Y C Zhou ◽  
X D Gao ◽  
C Q Wu ◽  
X M Ding ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Charge Transport ◽  
Organic Solids

Detection of density-dependent growth and fecundity of helminths in natural infections

Parasitology ◽  
1993 ◽  
Vol 106 (5) ◽  
pp. 527-539 ◽  
Author(s):  
A. W. Shostak ◽  
M. E. Scott
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Life Cycle ◽  
Density Dependence ◽  
Parasite Growth ◽  
Parasite Life Cycle ◽  
Density Dependent ◽  
Monte Carlo Simulation Technique ◽  
Life Cycle Interpretation ◽  
Dependent Growth

SUMMARYDensity-dependent constraints on parasite growth, survival or reproduction are thought to be important in preventing the unchecked increase in parasite numbers within individual hosts or host populations. While it is important to know where, and with what severity, density dependence is acting within the parasite life-cycle, interpretation of data from natural infections is difficult. In this paper, we present a Monte Carlo simulation technique for examining such data for evidence of density dependence. We also describe how this technique may be used to distinguish among mechanisms hypothesized to generate density-dependent phenomena.

Sano-Tachiya-Noolandi-Hong, Onsager and Braun models vs Monte Carlo simulation of charge photogeneration in organic solids

2016 ◽  
Vol 39 ◽  
pp. 328-339 ◽  
Author(s):  
Piotr Grygiel ◽  
Karol Falkowski ◽  
Daniel Pelczarski ◽  
Waldemar Stampor
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Organic Solids

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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