scholarly journals Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

2012 ◽  
Vol 86 (10) ◽  
Author(s):  
A. Debelle ◽  
M. Backman ◽  
L. Thomé ◽  
W. J. Weber ◽  
M. Toulemonde ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Heavy Ions ◽  
Computational Study ◽  
Recrystallization Process ◽  
Electronic Interactions ◽  
Swift Heavy Ions

scholarly journals Comprehensive Understanding of Hillocks and Ion Tracks in Ceramics Irradiated with Swift Heavy Ions

2020 ◽  
Vol 4 (4) ◽  
pp. 43
Author(s):  
Norito Ishikawa ◽  
Tomitsugu Taguchi ◽  
Hiroaki Ogawa
Keyword(s):  
Heavy Ions ◽  
Ion Irradiation ◽  
Incidence Angle ◽  
Recrystallization Process ◽  
Comprehensive Understanding ◽  
Ion Tracks ◽  
Swift Heavy Ions ◽  
Transmission Electron ◽  
Niobium Doped ◽  
Track Diameter

Amorphizable ceramics (LiNbO3, ZrSiO4, and Gd3Ga5O12) were irradiated with 200 MeV Au ions at an oblique incidence angle, and the as-irradiated samples were observed by transmission electron microscopy (TEM). Ion tracks in amorphizable ceramics are confirmed to be homogenous along the ion paths. Magnified TEM images show the formation of bell-shaped hillocks. The ion track diameter and hillock diameter are similar for all the amorphizable ceramics, while there is a tendency for the hillocks to be slightly bigger than the ion tracks. For SrTiO3 (STO) and 0.5 wt% niobium-doped STO (Nb-STO), whose hillock formation has not been fully explored, 200 MeV Au ion irradiation and TEM observation were also performed. The ion track diameters in these materials are found to be markedly smaller than the hillock diameters. The ion tracks in these materials exhibit inhomogeneity, which is similar to that reported for non-amorphizable ceramics. On the other hand, the hillocks appear to be amorphous, and the amorphous feature is in contrast to the crystalline feature of hillocks observed in non-amorphizable ceramics. No marked difference is recognized between the nanostructures in STO and those in Nb-STO. The material dependence of the nanostructure formation is explained in terms of the intricate recrystallization process.

Ion tracks and microstructures in barium titanate irradiated with swift heavy ions: A combined experimental and computational study

2013 ◽  
Vol 61 (20) ◽  
pp. 7904-7916 ◽  
Author(s):  
W. Jiang ◽  
R. Devanathan ◽  
C.J. Sundgren ◽  
M. Ishimaru ◽  
K. Sato ◽  
...  
Keyword(s):  
Barium Titanate ◽  
Heavy Ions ◽  
Computational Study ◽  
Ion Tracks ◽  
Swift Heavy Ions

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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