scholarly journals First-principles investigation of transient current in molecular devices by using complex absorbing potentials

2013 ◽  
Vol 87 (20) ◽  
Author(s):  
Lei Zhang ◽  
Jian Chen ◽  
Jian Wang
RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12704-12710 ◽  
Author(s):  
Lu Zhang ◽  
Jing Huang ◽  
Weiyi Wang ◽  
Qunxiang Li ◽  
Jinlong Yang

The molecular junction based on three-shell icosahedral matryoshka cluster with huge magnetic moment exhibits robust spin-filtering effect, which highlights it for promising applications in molecular devices.


RSC Advances ◽  
2014 ◽  
Vol 4 (95) ◽  
pp. 52933-52939 ◽  
Author(s):  
Mikołaj Sadek ◽  
Małgorzata Wierzbowska ◽  
Michał F. Rode ◽  
Andrzej L. Sobolewski

Multipeak negative differential resistance (NDR) molecular devices are designed from first principles.


Author(s):  
Shunta Watanabe ◽  
Yoko Tomita ◽  
Kohei Kawabata ◽  
Takashi NAKAYAMA

Abstract Metal-atom contamination often induces the degradation of organic molecular devices. In this work, we studied clustering feature of Au and Al impurity metal atoms in pentacene solids by the first-principles calculations. We found that Au atoms prefer to produce clusters in a molecule-edge space due to the strong bonding among Au atoms, and such clusters can increase their sizes by producing molecule vacancies. On the other hand, Al atom prefers to locate separately around the center of pentacene molecules due to the strong bonding between Al atom and surrounding molecules, which produces the scattering distribution of Al atoms in pentacene solids.


Surfaces ◽  
2021 ◽  
Vol 4 (1) ◽  
pp. 31-38
Author(s):  
Chang-Tian Wang ◽  
Yan-Fang Zhang ◽  
Shixuan Du

Single-molecular devices show remarkable potential for applications in downscale electronic devices. The adsorption behavior of a molecule on a metal surface is of great importance from both fundamental and technological points of view. Herein, based on first-principles calculations, the adsorption of a 4,4″-diamino-p-terphenyl (DAT) molecule on a Cu(001) surface has been systematically explored. The most stable configuration is the DAT molecule lying flat with a rotation angle of 13° relative to the [100] surface direction. It was found that the adsorption sites of benzene rings and nitrogen atoms in the DAT molecule have important influences on the stability of the adsorption configuration. Electron density differences analysis shows that the electrons accumulate at the DAT-Cu(001) interface. The density of states projected on a DAT molecule of DAT/Cu(001) exhibits a metallic character, while the freestanding ones are semiconducting, indicating a strong interaction between the DAT molecule and the Cu(001) surface in the most stable adsorption configuration. These results provide useful information for tuning the properties and functions of DAT molecules, and may offer useful insights for other organic molecule/surface systems.


1999 ◽  
Vol 582 ◽  
Author(s):  
M. Di Ventr ◽  
D. Langa ◽  
S.T. Pantelid

ABSTRACTFor molecular electronics, Boltzmann's equation is no longer valid for simulating device characteristics. We resent the first fully ab initio simulation of a molecular device that has already been studied ex erimentally, namely a benzene-1,4-dithiolate molecule between gold electrodes. The theoretical I-V curve has the same overall sha e as the ex erimental curve —reflecting the electronic structure of the molecule in the resence of the electric field — but the absolute value of the current is very sensitive to contact chemistry and geometry. In articular the resence ol a single gold atom between the molecule and the electrode surface reduces the conductance by more than an order of magnitude. Re lacement of the single gold atom by an aluminum atom, whose p orbitals cou le more effectively to the molecule's T orbitals, increases the conductance by about an order of magnitude. We have also studied the olarization effects induced by a third terminal (gate) on the I-V characteristics of the above device. In articular, we have found that current gain due to the gate bias can be achieved at reasonable gate fields. Finally the effect of current-induced forces on the device will be discussed.


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