scholarly journals Magnetic control of the valley degree of freedom of massive Dirac fermions with application to transition metal dichalcogenides

2013 ◽  
Vol 88 (11) ◽  
Author(s):  
Tianyi Cai ◽  
Shengyuan A. Yang ◽  
Xiao Li ◽  
Fan Zhang ◽  
Junren Shi ◽  
...  
2021 ◽  
Author(s):  
Santu Kumar Bera ◽  
Megha Shrivastava ◽  
Hanyu Zhang ◽  
E.M. Miller ◽  
Matthew C. Beard ◽  
...  

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Masaki Kondo ◽  
Masayuki Ochi ◽  
Tatsuhiro Kojima ◽  
Ryosuke Kurihara ◽  
Daiki Sekine ◽  
...  

AbstractIn non-centrosymmetric metals, spin-orbit coupling induces momentum-dependent spin polarization at the Fermi surfaces. This is exemplified by the valley-contrasting spin polarization in monolayer transition metal dichalcogenides with in-plane inversion asymmetry. However, the valley configuration of massive Dirac fermions in transition metal dichalcogenides is fixed by the graphene-like structure, which limits the variety of spin-valley coupling. Here, we show that the layered polar metal BaMnX2 (X = Bi, Sb) hosts tunable spin-valley-coupled Dirac fermions, which originate from the distorted X square net with in-plane lattice polarization. We found that BaMnBi2 has approximately one-tenth the lattice distortion of BaMnSb2, from which a different configuration of spin-polarized Dirac valleys is theoretically predicted. This was experimentally observed as a clear difference in the Shubnikov-de Haas oscillation at high fields between the two materials. The chemically tunable spin-valley coupling in BaMnX2 makes it a promising material for various spin-valleytronic devices.


ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...


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