Quasiparticle mass enhancement and Fermi surface shape modification in oxide two-dimensional electron gases

AbstractWe consider the stability of the circular Fermi surface of a two-dimensional electron gas system against an elliptical deformation induced by an anisotropic Coulomb interaction potential. We use the jellium approximation for the neutralizing background and treat the electrons as fully spin-polarized (spinless) particles with a constant isotropic (effective) mass. The anisotropic Coulomb interaction potential considered in this work is inspired from studies of two-dimensional electron gas systems in the quantum Hall regime. We use a Hartree–Fock procedure to obtain analytical results for two special Fermi liquid quantum electronic phases. The first one corresponds to a system with circular Fermi surface while the second one corresponds to a liquid anisotropic phase with a specific elliptical deformation of the Fermi surface that gives rise to the lowest possible potential energy of the system. The results obtained suggest that, for the most general situations, neither of these two Fermi liquid phases represent the lowest energy state of the system within the framework of the family of states considered in this work. The lowest energy phase is one with an optimal elliptical deformation whose specific value is determined by a complex interplay of many factors including the density of the system.

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Temperature studies of the tunnelling between parallel two-dimensional electron gases

Solid-State Electronics ◽

10.1016/0038-1101(95)00300-2 ◽

1996 ◽

Vol 40 (1-8) ◽

pp. 413-415 ◽

Cited By ~ 3

Author(s):

N Turner ◽

J.T Nicholls ◽

E.H Linfield ◽

K.M Brown ◽

M Pepper ◽

...

Keyword(s):

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases

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Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Physical Review Materials ◽

10.1103/physrevmaterials.5.064003 ◽

2021 ◽

Vol 5 (6) ◽

Author(s):

Ting-Ting Wang ◽

Sining Dong ◽

Zhi-Li Xiao ◽

Chong Li ◽

Wen-Cheng Yue ◽

...

Keyword(s):

Interface Roughness ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases

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Relevance of weak and strong classical scattering for the giant negative magnetoresistance in two-dimensional electron gases

Physical Review B ◽

10.1103/physrevb.104.045306 ◽

2021 ◽

Vol 104 (4) ◽

Author(s):

B. Horn-Cosfeld ◽

J. Schluck ◽

J. Lammert ◽

M. Cerchez ◽

T. Heinzel ◽

...

Keyword(s):

Negative Magnetoresistance ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases

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Energy relaxation studies in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As two-dimensional electron gases and quantum wires

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/4/022 ◽

2004 ◽

Vol 19 (4) ◽

pp. S60-S63 ◽

Cited By ~ 13

Author(s):

C Prasad ◽

D K Ferry ◽

H H Wieder

Keyword(s):

Quantum Wires ◽

Energy Relaxation ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Relaxation Studies

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Optical studies of spin precession in magnetic two-dimensional electron gases

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(98)00081-2 ◽

1998 ◽

Vol 2 (1-4) ◽

pp. 394-398 ◽

Cited By ~ 8

Author(s):

J.M Kikkawa ◽

I.P Smorchkova ◽

N Samarth ◽

D.D Awschalom

Keyword(s):

Spin Precession ◽

Two Dimensional ◽

Dimensional Electron ◽

Optical Studies ◽

Electron Gases

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Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped AlxGa1−xN/GaN Heterostructures

MRS Proceedings ◽

10.1557/proc-595-f99w11.53 ◽

1999 ◽

Vol 595 ◽

Author(s):

B. Shen ◽

T. Someya ◽

O. Moriwaki ◽

Y. Arakawa

Keyword(s):

Radiative Recombination ◽

Electron Gas ◽

Excitation Intensity ◽

Energy Separation ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Peak Energy ◽

Dimensional Electron Gas ◽

Increasing Temperature

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.

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