Photoemission spectroscopy (PES) has been used widely to study the electronic structure of valence and core levels. However, conventional PES is surface-sensitive. To probe the interface and bulk properties of materials, hard X-ray photoemission spectroscopy (HXPES) has received increasing interest in the last decade, because of the deep probing ability of photoelectrons with higher kinetic energies (2–10 keV). Recently, a HXPES system was developed at the Canadian Light Source, using the high-energy version of a R4000 electron analyzer-based spectrometer connected to a medium-energy beamline, the soft X-ray microcharacterization beamline (SXRMB). Excellent performance of the beamline and the spectrometer is demonstrated herein using Au Fermi and 4f core lines; and the controlled probing depth of HXPES at SXRMB is demonstrated by tuning the photon energy (2–9 keV) in the study of a series of SiO2/SiC multilayer samples. Combined with the high-resolution X-ray absorption spectroscopy available at the SXRMB, the HXPES offers a powerful nondestructive technique for studying bulk properties of various materials.
Revising the
4f
symmetry in
CeCu2Ge2
: Soft x-ray absorption and hard x-ray photoemission spectroscopy