Energy Loss of a Low-Energy Ion Beam in Passage through an Equilibrium Cesium Plasma

1972 ◽  
Vol 28 (19) ◽  
pp. 1254-1258 ◽  
Author(s):  
I. L. Klavan ◽  
D. M. Cox ◽  
H. H. Brown ◽  
B. Bederson
1974 ◽  
Vol 10 (4) ◽  
pp. 1409-1424 ◽  
Author(s):  
D. M. Cox ◽  
H. H. Brown ◽  
I. Klavan ◽  
B. Bederson

Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).


Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.


2021 ◽  
pp. 129768
Author(s):  
Dou Luo ◽  
Xue Lai ◽  
Nan Zheng ◽  
Chenghao Duan ◽  
Zhaojin Wang ◽  
...  

Solar RRL ◽  
2021 ◽  
pp. 2100450
Author(s):  
Bing-Huang Jiang ◽  
Yi-Peng Wang ◽  
Yu-Wei Su ◽  
Jia-Fu Chang ◽  
Chu-Chen Chueh ◽  
...  

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