scholarly journals Photoinduced modulation of the excitonic resonance via coupling with coherent phonons in a layered semiconductor

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
S. Mor ◽  
V. Gosetti ◽  
A. Molina-Sánchez ◽  
D. Sangalli ◽  
S. Achilli ◽  
...  
2014 ◽  
Vol 9 (12) ◽  
pp. 1024-1030 ◽  
Author(s):  
Xidong Duan ◽  
Chen Wang ◽  
Jonathan C. Shaw ◽  
Rui Cheng ◽  
Yu Chen ◽  
...  

1996 ◽  
Vol 53 (22) ◽  
pp. 14806-14817 ◽  
Author(s):  
H. C. Hsueh ◽  
M. C. Warren ◽  
H. Vass ◽  
G. J. Ackland ◽  
S. J. Clark ◽  
...  

Author(s):  
Agata Karolina Tołłoczko ◽  
Szymon J. Zelewski ◽  
Michał Błaszczak ◽  
Tomasz Woźniak ◽  
Anna Siudzińska ◽  
...  

Group-IV monochalcogenides, such as germanium selenide (GeSe) are strongly anisotropic semiconducting van der Waals crystals isoelectronic to black phosphorus, with superior stability in air conditions. High optical absorption, good conductivity,...


2018 ◽  
Vol 215 (24) ◽  
pp. 1800460
Author(s):  
Anatoliy P. Bakhtinov ◽  
Volodymyr M. Vodopyanov ◽  
Volodymyr I. Ivanov ◽  
Ivan G. Tkachuk ◽  
Viktor V. Netyaga ◽  
...  

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.


1998 ◽  
Vol 15 (11) ◽  
pp. 834-836 ◽  
Author(s):  
Wei Qian ◽  
Hong Yan ◽  
Jing-jing Wang ◽  
Ying-hua Zou ◽  
Lin Lin ◽  
...  
Keyword(s):  

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Yiping Shang ◽  
Wu Yang ◽  
Yabei Xu ◽  
Siru Pan ◽  
Huayu Wang ◽  
...  

In this study, few-layered tungsten disulfide (WS2) was prepared using a liquid phase exfoliation (LPE) method, and its thermal catalytic effects on an important kind of energetic salts, dihydroxylammonium-5,5′-bistetrazole-1,1′-diolate (TKX-50), were investigated. Few-layered WS2 nanosheets were obtained successfully from LPE process. And the effects of the catalytic activity of the bulk and few-layered WS2 on the thermal decomposition behavior of TKX-50 were studied by using synchronous thermal analysis (STA). Moreover, the thermal analysis data was analyzed furtherly by using the thermokinetic software AKTS. The results showed the WS2 materials had an intrinsic thermal catalysis performance for TKX-50 thermal decomposition. With the few-layered WS2 added, the initial decomposition temperature and activation energy (Ea) of TKX-50 had been decreased more efficiently. A possible thermal catalysis decomposition mechanism was proposed based on WS2. Two dimensional-layered semiconductor WS2 materials under thermal excitation can promote the primary decomposition of TKX-50 by enhancing the H-transfer progress.


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