A 1000°C furnace forin situX-ray diffraction

2001 ◽  
Vol 34 (5) ◽  
pp. 677-678 ◽  
Author(s):  
Anna Puig-Molina ◽  
Bernard Gorges ◽  
Heinz Graafsma

A furnace covering the temperature range from 25 to 1000°C has been designed and constructed to studyin situsolid-state reactions and melting and crystallization processes, with X-ray diffraction in transmission geometry using a two-dimensional-detector system. The oven can work in low vacuum and under a controlled atmosphere.

1993 ◽  
Vol 321 ◽  
Author(s):  
W. Dickenscheid ◽  
R. Birringer

ABSTRACTSolid state reactions in mixtures of nanometer-sized Cu and Zr as well as Ni and Zr crystallites -produced by inert-gas condensation followed by in situ compaction - have been investigated by x-ray diffraction and thermal analysis. The annealing behavior is compared to that of corresponding multilayer samples. The results are discussed with emphasis placed on the different parameters controlling solid state reactions.


2010 ◽  
Vol 87 (3) ◽  
pp. 258-262 ◽  
Author(s):  
W. Knaepen ◽  
J. Demeulemeester ◽  
D. Deduytsche ◽  
J.L. Jordan-Sweet ◽  
A. Vantomme ◽  
...  

1984 ◽  
Vol 37 ◽  
Author(s):  
Bruce M. Clemens ◽  
Jeffrey C. Buchholz

AbstractFormation of an amorphous zirconium-nickel phase by solid state reaction of a layered crystalline structure has been studied by in-situ resistivity, x-ray diffraction, and Auger depth profiling. The reaction was studied as a function of layer thickness and reaction temperature.Samples with a layer thickness of less than 4 atomic planes had x-ray diffraction spectra with one broad maximum characteristic of amorphous material. As the layer thickness increased, the maximum broadened and separated into two resolved peaks corresponding to crystalline nickel and zirconium. These structures were transformed to an amorphous nickel-zirconium alloy by an anneal at temperatures below the crystallization temperature of the amorphous phase. The reaction occured by a layer growth process, where the thickness of the layer evolved linearly with the square root of time.


Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.


2011 ◽  
Vol 21 (15) ◽  
pp. 5604 ◽  
Author(s):  
Zonghai Chen ◽  
Yang Ren ◽  
Yan Qin ◽  
Huiming Wu ◽  
Shengqian Ma ◽  
...  

2020 ◽  
Vol 22 (34) ◽  
pp. 18964-18975
Author(s):  
Dorota Matras ◽  
Antonis Vamvakeros ◽  
Simon D. M. Jacques ◽  
Vesna Middelkoop ◽  
Gavin Vaughan ◽  
...  

In situ XRD-CT and post-reaction SEM/EDX were used to study the solid-state chemistry and structural changes of Ba0.5Sr0.5Co0.8Fe0.2O3−δ membrane reactors during the oxidative coupling of methane reaction.


2004 ◽  
Vol 59 (6) ◽  
pp. 635-638 ◽  
Author(s):  
Norbert W. Mitzel ◽  
Udo Losehand

The compounds (H3C)2S, (H3Si)2S and (H3Ge)2S have been crystallised in situ on a diffractometer and their crystal structures determined by low-temperature X-ray diffraction. The molecules are present as monomers in the crystals. The aggregation of the molecules through secondary intermolecular contacts in the crystal is different: (H3C)2S is weakly associated into dimers by S···S contacts, whereas (H3Si)2S and (H3Ge)2S form Si···S and Ge···S contacts in an ice-analogous aggregation motif. Important geometry parameters are (H3C)2S: C-S 1.794(av) Å , C-S-C 99.2(1)°; (H3Si)2S: Si- S 2.143(1) Å , Si-S-Si 98.4°; (H3Ge)2S Ge-S 2.223(2) and 2.230(2) Å , Ge-S-Ge 98.2(1)◦.


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