scholarly journals Short and long-range order at surfaces probed by surface X-ray diffuse scattering

2000 ◽  
Vol 56 (s1) ◽  
pp. s31-s31 ◽  
Author(s):  
M. Sauvage-Simkin ◽  
Y. Garreau ◽  
K. Aïd ◽  
N. Jedrecy ◽  
R. Pinchaux
1982 ◽  
Vol 37 (11) ◽  
pp. 1361-1368 ◽  
Author(s):  
H.-J. Schweizer ◽  
Reginald Gruehn

By using chemical transport reactions with various transporting agents (HgCl2, NbCl5, Nb3O7Cl) a slightly substoiehiometric NbO2-phase, β-NbO2, was obtained from samples with O/Nb ∼ 1.5 (source; T > 1373 K) and with deposition temperatures > 1273 K (sink). The rango of composition of β-NbO2 was found to exist from NbO1.990 to NbO1.998.The structure of the tetragonal, column-shaped black crystals was determined by X-ray diffraction. It crystallizes tetragonally in the space group I41 with lattice constants a = 9.693(3) Å, c = 5.985(1) Å and Z = 10 formula units.The crystal structure of β-NbO2 is shown to be a deformed rutile type. As in α-NbO2 the Nb-atoms are grouped in pairs. However, both oxides are different with respect to their long-range order.


2001 ◽  
Vol 668 ◽  
Author(s):  
C.-H. Chang ◽  
Su-Huai Wei ◽  
S. P. Ahrenkiel ◽  
J. W. Johnson ◽  
B.J. Stanbery ◽  
...  

ABSTRACTThe observed junction between α-CuInSe2 and the In-rich compositions in the β-phase domain (e.g. CuIn3Se5) appears to play an important role in the photovoltaic process [1]. There remain, however, inconsistencies and uncertainties about the boundary and structure of this phase. In general the structure of this phase belongs to defect tetrahedral family of structures [2], which can be described as normal tetrahedral structures with a certain fixed number of unoccupied structure sites. In this work, the local structures of various (Cu2Se)x(In2Se3)1−x semiconductor alloys in the β-phase domain were studied by Extended X-ray Absorption Fine Structure (EXAFS) and the results were compared to those for the α-CuInSe2 phase. The long- range order of these compositions was studied by X-Ray powder Diffraction (XRD) and electron diffraction. It was found the local structures of these compounds are well defined. These compounds, however, could not be well described by any long-range order structure model, especially the selenium position. First-principles band structure calculations were performed to assist in assigning crystal structures to CuInSe2, CuIn3Se5 and CuIn5Se8. The calculations indicated that the local environments of these compounds are well defined. Their long-range order might depend sensitively on growth history and the configurational entropies as suggested by the similar formation energies of several possible crystal structures for CuIn3Se5 and CuIn5Se8.


2012 ◽  
Vol 86 (2) ◽  
Author(s):  
M. Maret ◽  
C. Brombacher ◽  
P. Matthes ◽  
D. Makarov ◽  
N. Boudet ◽  
...  

2002 ◽  
Vol 88 (20) ◽  
Author(s):  
A. V. Petukhov ◽  
D. G. A. L. Aarts ◽  
I. P. Dolbnya ◽  
E. H. A. de Hoog ◽  
K. Kassapidou ◽  
...  

1990 ◽  
Vol 5 (4) ◽  
pp. 763-768 ◽  
Author(s):  
Hui Lin ◽  
David P. Pope

An x-ray powder diffraction method was used to determine the location of tantalum atoms in Ni3Al. A series of Ni3(Al, Ta) alloys were produced with tantalum contents ranging from 0.1 to 3.0 at.%. Fine powders with average particle sizes less than 80 μm were made from melt-spun ribbons by a grinding process. The values of the intensity of the (100) superlattice peak normalized to that of the (200) fundamental peak as a function of tantalum content agreed with the calculated values, assuming that tantalum atoms substitute on aluminum sites, not on nickel sites, and also assuming small amounts of anti-site defects exist in the ordered fee structure of Ni3(Al, Ta) alloys. It is concluded from our experiments that tantalum atoms substitute for aluminum in Ni3Al. The long-range order parameters thus calculated of the Ni3(Al, Ta) alloys are generally above 0.84 and below 0.95, except for Ni75Al24.8Ta0.2, at which composition the long-range order parameter is close to unity.


1993 ◽  
Vol 324 ◽  
Author(s):  
Teruo Mozume

AbstractThe x-ray diffraction (XRD) of InGaAs/InP short-period superlattices (SPSL's) grown on (001)InP substrates by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) shows that the GSMBE grown SPSL is strain free, and that GSMEE grown SPSL's with InGa-P and In-As heterointerfaces have strain-induced zerothorder satellite peak shift consistent with that in simulation results for the InGaAs/InP SPSL with one monolayer of InGaP and InAs inserted in each interface. Partial destruction of the long-range order is confirmed by the observation of the extra diffraction peak in GSMBE grown SPSL and by weak intensity of satellite peaks and nonuniform spacing between satellite peaks in GSMEE grown SPSL's. Raman scattering shows that the strain is accommodated in the interface layer in GSMEE grown samples. A confinement model without interface disorder fits the GaAs LO phonon very well. These results indicate that the local atomic arrangements are tailored by GSMEE, but that long range-order is impaired by the misfit dislocations in GSMEE grown SPSL's and by the exchange between As to P at the interfaces in GSMBE grown SPSL.


1951 ◽  
Vol 22 (8) ◽  
pp. 1088-1089 ◽  
Author(s):  
B. L. Averbach

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