scholarly journals Interface structure of GaSe/Si(111) studied by X-ray standing waves

1996 ◽  
Vol 52 (a1) ◽  
pp. C475-C475
Author(s):  
B. Capelle ◽  
J. F. Petroff ◽  
J. C. Boulliard ◽  
A. Koebel ◽  
Y. Zheng
2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 7050-7052 ◽  
Author(s):  
Shinichiro Nakatani ◽  
Kazushi Sumitani ◽  
Akinobu Nojima ◽  
Toshio Takahashi ◽  
Keiichi Hirano ◽  
...  

2002 ◽  
Vol 65 (19) ◽  
Author(s):  
Andreas Klust ◽  
Markus Bierkandt ◽  
Joachim Wollschläger ◽  
Bernhard H. Müller ◽  
Thomas Schmidt ◽  
...  

2007 ◽  
Vol 75 (6) ◽  
Author(s):  
Ajay Gupta ◽  
Dileep Kumar ◽  
Carlo Meneghini

1986 ◽  
Vol 149 (05) ◽  
pp. 69-103 ◽  
Author(s):  
M.V. Koval'chuk ◽  
V.G. Kohn
Keyword(s):  

2020 ◽  
Vol 4 (2) ◽  
Author(s):  
Jens Niederhausen ◽  
Antoni Franco-Cañellas ◽  
Simon Erker ◽  
Thorsten Schultz ◽  
Katharina Broch ◽  
...  
Keyword(s):  

2007 ◽  
Vol 90 (19) ◽  
pp. 193122 ◽  
Author(s):  
Chengqing Wang ◽  
Ronald L. Jones ◽  
Eric K. Lin ◽  
Wen-Li Wu ◽  
Jim Leu

1990 ◽  
Vol 208 ◽  
Author(s):  
Ichiro Hirosawa ◽  
Jun'ichiro Nizuki ◽  
Toru Tatsumi ◽  
Koichi Akimoto ◽  
Junji Matsui

ABSTRACTIn order to investigate the initial oxidation process Qf the Si (111) surface, we have studied the molecular beam deposited Si0 2/Si(111)-7×7 interface structure using grazing incidence X-ray diffraction geometry. We suggest a three-fold symmetry structural model composed of stacking fault layer, dimer layer and additional ordered atoms. The three-fold symmetry structure comes from the preference for oxidation in the faulted half of the 7×7 structure.


1999 ◽  
Vol 60 (23) ◽  
pp. 15546-15549 ◽  
Author(s):  
Osami Sakata ◽  
Nobuyuki Matsuki ◽  
Hiroo Hashizume
Keyword(s):  

2018 ◽  
Vol 122 (47) ◽  
pp. 26934-26944 ◽  
Author(s):  
Katherine J. Harmon ◽  
Ying Chen ◽  
Eric J. Bylaska ◽  
Jeffrey G. Catalano ◽  
Michael J. Bedzyk ◽  
...  

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