Reconstructed Structure of SiO2/Si(111) Interface

1990 ◽  
Vol 208 ◽  
Author(s):  
Ichiro Hirosawa ◽  
Jun'ichiro Nizuki ◽  
Toru Tatsumi ◽  
Koichi Akimoto ◽  
Junji Matsui

ABSTRACTIn order to investigate the initial oxidation process Qf the Si (111) surface, we have studied the molecular beam deposited Si0 2/Si(111)-7×7 interface structure using grazing incidence X-ray diffraction geometry. We suggest a three-fold symmetry structural model composed of stacking fault layer, dimer layer and additional ordered atoms. The three-fold symmetry structure comes from the preference for oxidation in the faulted half of the 7×7 structure.

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.


1989 ◽  
Vol 159 ◽  
Author(s):  
Koichi Akimoto ◽  
Jun'Ichiro Mizuki ◽  
Ichiro Hirosawa ◽  
Junji Matsui

ABSTRACTSurface superstructures (reconstructed structures) have been observed by many authors. However, it is not easy to confirm that a superstructure does exist at an interface between two solid layers. The present paper reports a direct observation, by a grazing incidence x-ray diffraction technique with use of synchrotron radiation, of superstructures at the interface. Firstly, the boron-induced R30° reconstruction at the Si interface has been investigated. At the a Si/Si(111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a R30° lattice. Even at the interface between a solid phase epitaxial Si(111) layer and a Si(111) substrate, the boron-induced R30° reconstruction has been also observed. Secondly, SiO2/Si(100)-2×l interfacial superstructures have been investigated. Interfacial superstructures have been only observed in the samples of which SiO2 layers have been deposited with a molecular beam deposition method. Finally, the interfaces of MOCVD-grown AIN/GaAs(100) have been shown to have 1×4 and 1×6 superstructures.


1990 ◽  
Vol 209 ◽  
Author(s):  
C. H. Lee ◽  
K. S. Liang ◽  
F. S. Shieu ◽  
S.L. Sass ◽  
C. P. Flynn

ABSTRACTThe interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.


1994 ◽  
Vol 65 (13) ◽  
pp. 1720-1722 ◽  
Author(s):  
Tsai‐Sheng Gau ◽  
Shih‐Lin Chang ◽  
Hsueh‐Hsing Hung ◽  
Chih‐Hao Lee ◽  
Tung‐Wuu Huang ◽  
...  

2005 ◽  
Vol 486 (1-2) ◽  
pp. 178-181 ◽  
Author(s):  
M. Salluzzo ◽  
A. Fragneto ◽  
G.M. de Luca ◽  
U. Scotti di Uccio ◽  
X. Torrelles

1996 ◽  
Vol 440 ◽  
Author(s):  
M. Iwanami ◽  
R. Furukawa ◽  
T. Matsumoto ◽  
M. Kamiko ◽  
R. Yamamoto

AbstractTo obtain informations about the correlation between structure and electrical property in metallic multilayers, we have fabricated Ni/Co superlattices with and without Pb as a surfactant by molecular beam epitaxy. From the observations of RHEED and x-ray diffraction patterns, we confirmed that the surfaces of Ni/Co superlattices with Pb are flatter and the interfaces are sharper than one without Pb, which means that Pb operates as an effective surfactant.We have investigated the electrical properties of superlattices by measuring magnetoresistance. The initial change of resistance with magnetic field from 0 to 1 kOe was larger for the superlattices with a surfactant, while once magnetic field was applied, the effect of a surfactant to resistivity change was not observed. This suggests that Pb also changes the initial magenetic domain structure and the magnetotransport property of Ni/Co superlattice is not sensitive to interface structure.


2001 ◽  
Vol 34 (4) ◽  
pp. 427-435 ◽  
Author(s):  
S. J. Skrzypek ◽  
A. Baczmański ◽  
W. Ratuszek ◽  
E. Kusior

A new development in the determination of residual stresses in thin surface layers and coatings is presented. The procedure, based on the grazing-incidence X-ray diffraction geometry (referred to here as the `g-sin2 ψ' geometry), enables non-destructive measurement at a chosen depth below the sample surface. The penetration depth of the X-ray radiation is well defined and does not change during the experiment. The method is particularly useful for the analysis of non-uniform stresses in near-surface layers. The g-sin2 ψ geometry was applied for measurements of the residual stresses in TiN coatings. Anisotropic diffraction elastic constants of textured material were used to determine the stress value from the measured lattice strains. A new method of data treatment enables reference-free measurements of residual stresses.


Author(s):  
W. Z. Chang ◽  
D. B. Wittry

Since Du Mond and Kirkpatrick first discussed the principle of a bent crystal spectrograph in 1930, curved single crystals have been widely utilized as spectrometric monochromators as well as diffractors for focusing x rays diverging from a point. Curved crystal diffraction theory predicts that the diffraction parameters - the rocking curve width w, and the peak reflection coefficient r of curved crystals will certainly deviate from those of their flat form. Due to a lack of curved crystal parameter data in current literature and the need for optimizing the choice of diffraction geometry and crystal materials for various applications, we have continued the investigation of our technique presented at the last conference. In the present abstract, we describe a more rigorous and quantitative procedure for measuring the parameters of curved crystals.The diffraction image of a singly bent crystal under study can be obtained by using the Johann geometry with an x-ray point source.


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