Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves

2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 7050-7052 ◽  
Author(s):  
Shinichiro Nakatani ◽  
Kazushi Sumitani ◽  
Akinobu Nojima ◽  
Toshio Takahashi ◽  
Keiichi Hirano ◽  
...  
Keyword(s):  
Standing Waves ◽  
Interface Structure ◽  
X Ray ◽  
Amorphous Si

scholarly journals Interface structure of GaSe/Si(111) studied by X-ray standing waves

1996 ◽  
Vol 52 (a1) ◽  
pp. C475-C475
Author(s):  
B. Capelle ◽  
J. F. Petroff ◽  
J. C. Boulliard ◽  
A. Koebel ◽  
Y. Zheng
Keyword(s):  
Standing Waves ◽  
Interface Structure ◽  
X Ray

X-Ray Refraction Characterization of the Interface Structure of Ceramics

2000 ◽  
Author(s):  
Manfred P. Hentschel ◽  
Karl-Wolfram Harbich ◽  
Joerg Schors ◽  
Axel Lange
Keyword(s):  
High Performance ◽  
Ceramic Composites ◽  
Interface Structure ◽  
X Rays ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
X Ray Scattering ◽  
Monolithic Ceramics ◽  
Nondestructive Characterization

Advanced ceramics require specific methods for their nondestructive characterization. X-ray refraction techniques determine the specific surfaces and interfaces of high performance ceramics, composites and other low density materials down to nano-meter dimensions. X-ray refraction occurs due to the interference of phase shifted X-rays in ultra small angle X-ray scattering (USAXS) at objects above 100 nm size. Applications to monolithic ceramics and ceramic composites are presented. The well localized mean pore size of ceramics and the crack growth of ceramic composites are measured non-destructively.

scholarly journals Low-temperature interface structure ofCaF2/Si(111)studied by combining x-ray standing waves with component-resolved photoemission

2002 ◽  
Vol 65 (19) ◽  
Author(s):  
Andreas Klust ◽  
Markus Bierkandt ◽  
Joachim Wollschläger ◽  
Bernhard H. Müller ◽  
Thomas Schmidt ◽  
...  
Keyword(s):  
Low Temperature ◽  
Standing Waves ◽  
Interface Structure ◽  
X Ray

X-ray standing waves in LSM for characterization of ultra-thin films

1993 ◽  
Vol 26 (4A) ◽  
pp. A206-A209 ◽  
Author(s):  
S I Zheludeva ◽  
M V Kovalchuk ◽  
N N Novikova ◽  
A N Sosphenov
Keyword(s):  
Thin Films ◽  
Standing Waves ◽  
X Ray

Interface structure in magnetic multilayers using x-ray standing waves

2007 ◽  
Vol 75 (6) ◽  
Author(s):  
Ajay Gupta ◽  
Dileep Kumar ◽  
Carlo Meneghini
Keyword(s):  
Standing Waves ◽  
Interface Structure ◽  
Magnetic Multilayers ◽  
X Ray

Structural characterization of the (1 monolayer Sb)/GaP(110) interface using x-ray standing waves

1992 ◽  
Vol 46 (11) ◽  
pp. 6869-6874 ◽  
Author(s):  
K. E. Miyano ◽  
T. Kendelewicz ◽  
J. C. Woicik ◽  
P. L. Cowan ◽  
C. E. Bouldin ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Standing Waves ◽  
X Ray

X-Ray Characterization of Buried δ Layers

1998 ◽  
Vol 05 (01) ◽  
pp. 145-149 ◽  
Author(s):  
J. Falta ◽  
D. Bahr ◽  
G. Materlik ◽  
B. H. Müller ◽  
M. Horn-Von Hoegen
Keyword(s):  
Lattice Constant ◽  
Linear Dependence ◽  
Standing Waves ◽  
Interface Roughness ◽  
Tetragonal Distortion ◽  
Detailed Characterization ◽  
X Ray ◽  
Lattice Position

A combination of measurements of crystal truncation roda and X-ray standing waves has been used for a detailed characterization of buried Ge δ layers on Si(001). Measurements of crystal truncation rods reveal the interface roughness, the δ layer lattice constant and the δ layer concentration. From measurements with X-ray standing waves the dopant lattice position and crystallinity of the δ layer are determined. We find a linear dependence of the local tetragonal distortion of the Ge bonding in the δ layer on the Ge concentration in the layer.

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