scholarly journals Full reciprocal-space mapping up to 2000 K under controlled atmosphere: the multipurpose QMAX furnace

2020 ◽  
Vol 53 (3) ◽  
pp. 650-661
Author(s):  
René Guinebretière ◽  
Stephan Arnaud ◽  
Nils Blanc ◽  
Nathalie Boudet ◽  
Elsa Thune ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Structural Phase ◽  
Grazing Incidence ◽  
Sample Surface ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
Angle Scattering

A furnace that covers the temperature range from room temperature up to 2000 K has been designed, built and implemented on the D2AM beamline at the ESRF. The QMAX furnace is devoted to the full exploration of the reciprocal hemispace located above the sample surface. It is well suited for symmetric and asymmetric 3D reciprocal space mapping. Owing to the hemispherical design of the furnace, 3D grazing-incidence small- and wide-angle scattering and diffraction measurements are possible. Inert and reactive experiments can be performed at atmospheric pressure under controlled gas flux. It is demonstrated that the QMAX furnace allows monitoring of structural phase transitions as well as microstructural evolution at the nanoscale, such as self-organization processes, crystal growth and strain relaxation. A time-resolved in situ oxidation experiment illustrates the capability to probe the high-temperature reactivity of materials.

In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping

2010 ◽  
Vol 1268 ◽  
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Akihisa Sai ◽  
Masamitu Takahasi ◽  
Seiji Fujikawa ◽  
...  
Keyword(s):  
Film Thickness ◽  
Film Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
In Situ Data ◽  
Dislocation Behavior

AbstractThe in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.

Time-resolved X-ray reciprocal space mapping of the crystal under external electric field

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
X Ray

scholarly journals Monitoring microstructural evolution in-situ during cyclic deformation by high resolution reciprocal space mapping

2017 ◽  
Vol 843 ◽  
pp. 012031 ◽  
Author(s):  
Annika M. Diederichs ◽  
Felix Thiel ◽  
Torben Fischer ◽  
Ulrich Lienert ◽  
Wolfgang Pantleon
Keyword(s):  
High Resolution ◽  
Microstructural Evolution ◽  
Cyclic Deformation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

1996 ◽  
Vol 79 (7) ◽  
pp. 3578-3584 ◽  
Author(s):  
J. A. Olsen ◽  
E. L. Hu ◽  
S. R. Lee ◽  
I. J. Fritz ◽  
A. J. Howard ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

Indexation scheme for oriented molecular thin films studied with grazing-incidence reciprocal-space mapping

2007 ◽  
Vol 40 (4) ◽  
pp. 716-718 ◽  
Author(s):  
Detlef-M. Smilgies ◽  
Daniel R. Blasini
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Small Molecules ◽  
Organic Electronics ◽  
Grazing Incidence ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Molecular Structures ◽  
Reciprocal Space Mapping ◽  
Mapping Scheme

Thin films of small molecules relevant to organic electronics applications often show a confusing degree of polymorphism. An effective reciprocal-space mapping scheme has been developed in order to find and index thin-film reflections which are related to previously known molecular structures. By method of elimination, thin-film reflections due to novel thin-film phases can thus be identified.

Investigation of strain relaxation in short-period Si m Ge n superlattices using reciprocal space mapping

1993 ◽  
Author(s):  
E. Koppensteiner ◽  
P. Hamberger ◽  
Guenther E. Bauer ◽  
Horst Kibbel ◽  
Hartmut Presting ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Short Period

Reassembly and Oxidation of a Silver Nanoparticle Bilayer Probed by in Situ X-ray Reciprocal Space Mapping

2014 ◽  
Vol 118 (13) ◽  
pp. 7195-7201 ◽  
Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Monika Benkovicova ◽  
Matej Jergel ◽  
Andrej Vojtko ◽  
...  
Keyword(s):  
Silver Nanoparticle ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray
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