Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO3

2012 ◽  
Vol 29 (2) ◽  
pp. 96-100 ◽  
Author(s):  
Ang Chai Im ◽  
Leonard Lu Tze Jian ◽  
Ooi Poh Kok ◽  
Suriani Yaakob ◽  
Ching Chin Guan ◽  
...  
Author(s):  
F.J. Müller ◽  
J C Gallop ◽  
J.R. Laverty ◽  
M.A. Angadi ◽  
A.D. Caplin ◽  
...  

2016 ◽  
Vol 184 ◽  
pp. 173-176 ◽  
Author(s):  
Arzhang Mani ◽  
Mohammad Nikfalazar ◽  
Falk Muench ◽  
Aldin Radetinac ◽  
Yuliang Zheng ◽  
...  

2010 ◽  
Vol 532 (1) ◽  
pp. 141/[557]-147/[563] ◽  
Author(s):  
Keun Young Lee ◽  
Han Jae Shin ◽  
Dong Cheul Han ◽  
Sunyoung Son ◽  
Sang-Woo Kim ◽  
...  

2008 ◽  
Vol 254 (21) ◽  
pp. 6697-6700 ◽  
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R.T. Zhang ◽  
C.R. Yang ◽  
A. Yu ◽  
B. Wang ◽  
H.J. Tang ◽  
...  

2012 ◽  
Vol 49 (2) ◽  
pp. 45-50
Author(s):  
O. Shiman ◽  
V. Gerbreders ◽  
E. Sledevskis ◽  
A. Bulanovs

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.


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