Explaining the amplitude of RTS noise in submicrometer MOSFETs

1992 ◽  
Vol 39 (2) ◽  
pp. 422-429 ◽  
Author(s):  
E. Simoen ◽  
B. Dierickx ◽  
C.L. Claeys ◽  
G.J. Declerck
Keyword(s):  
1993 ◽  
Author(s):  
Z. Chobola ◽  
P. Vasina ◽  
J. Sikula

2010 ◽  
Vol 50 (2) ◽  
pp. 179-182 ◽  
Author(s):  
Ma Zhongfa ◽  
Zhang Peng ◽  
Wu Yong ◽  
Li Weihua ◽  
Zhuang Yiqi ◽  
...  

2015 ◽  
Vol 14 (04) ◽  
pp. 1550041 ◽  
Author(s):  
Alexey V. Klyuev ◽  
Arkady V. Yakimov

Low frequency noise characteristics of Schottky diodes are investigated. Two noise components were found in experimental noise records: random telegraph signal (RTS), caused by burst noise, and 1/f Gaussian noise. The noise is sampled and recorded on a PC. Then, in addition to the spectrum, the probability density function (pdf) of the total noise is analyzed. In the case of the mixture of the burst noise and Gaussian (1/f) noise, the pdf has two maxima separated by a local minimum. Extraction of burst noise component from Gaussian noise background was performed using the pdf, standard signal detection theory, and advanced signal-processing techniques. It is concluded that the RTS noise and 1/f noise have different physical origins in Schottky diodes. The raw noise is split into two components. One appeared to be burst noise with a Lorentzian-like spectral shape. The other component is 1/f noise. Having extracted 1/f noise, we have studied the dependence of noise spectral values on the current across the diode.


2004 ◽  
Vol 04 (01) ◽  
pp. 239-239 ◽  
Author(s):  
A. V. Belyakov ◽  
L. K. J. Vandamme ◽  
M. Yu. Perov ◽  
A. V. Yakimov
Keyword(s):  

1995 ◽  
Vol 38 (1) ◽  
pp. 37-49 ◽  
Author(s):  
D. Pogany ◽  
S. Ababou ◽  
G. Guillot ◽  
X. Hugon ◽  
B. Vilotitch ◽  
...  

2016 ◽  
Author(s):  
Ralf Kohley ◽  
Rémi Barbier ◽  
Bogna Kubik ◽  
Sylvain Ferriol ◽  
Jean-Claude Clemens ◽  
...  

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