Analytical modeling of oxide breakup effect on base current in n/sup +/-polysilicon emitter bipolar devices

1992 ◽  
Vol 39 (12) ◽  
pp. 2797-2802 ◽  
Author(s):  
J.J. Sung ◽  
T.M. Liu ◽  
Y.O. Kim ◽  
T.-Y. Chiu
Keyword(s):  
Analytical Modeling ◽  
Base Current ◽  
Bipolar Devices ◽  
Polysilicon Emitter

Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

1999 ◽  
Vol 35 (9) ◽  
pp. 752 ◽  
Author(s):  
J. Schiz ◽  
P. Ashburn
Keyword(s):  
Bipolar Transistors ◽  
Base Current ◽  
Polysilicon Emitter

Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis

1994 ◽  
Author(s):  
David Quon ◽  
Yang H. Chang ◽  
Gregory J. Sonek ◽  
Guann-pyng Li
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Base Current ◽  
Polysilicon Emitter

Dc characterization of lateral bipolar devices in standard CMOS technology: a new model for base current partitioning

1999 ◽  
Vol 43 (5) ◽  
pp. 883-889 ◽  
Author(s):  
F. Corsi ◽  
M. Di Ciano ◽  
C. Marzocca
Keyword(s):  
Cmos Technology ◽  
New Model ◽  
Base Current ◽  
Bipolar Devices ◽  
Dc Characterization

The asymptotes of the base current in bipolar devices

1988 ◽  
Vol 35 (11) ◽  
pp. 1902-1908 ◽  
Author(s):  
L.M. Castaner ◽  
P. Ashburn ◽  
L. Prat Vinas ◽  
G.R. Wolstenholme
Keyword(s):  
Base Current ◽  
Bipolar Devices

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

1997 ◽  
Vol 82 (5) ◽  
pp. 2671-2675 ◽  
Author(s):  
P. Llinares ◽  
D. Celi ◽  
O. Roux-dit-Buisson ◽  
G. Ghibaudo ◽  
J. A. Chroboczek
Keyword(s):  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors

1996 ◽  
Vol 79 (6) ◽  
pp. 3330-3336 ◽  
Author(s):  
A. Mounib ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
D. Pogany ◽  
A. Chantre ◽  
...  
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

Tem Studies of Polysilicon Emitter Bipolar Materials & Devices: Increased Interfacial Oxide Break-Up and Polysilicon Regrowth and Decreased Emitter Resistance by Fluorine Implantation

1998 ◽  
Vol 523 ◽  
Author(s):  
C. D. Marsh ◽  
N. E. Moiseiwitsch ◽  
J. Schiz ◽  
G. R. Booker ◽  
P. Ashburn
Keyword(s):  
Native Oxide ◽  
Bipolar Devices ◽  
Break Up ◽  
Polysilicon Emitter ◽  
Interface Structures ◽  
The Relationship

AbstractThe role of fluorine (F) in the break-up of the native oxide and the regrowth of As doped poly-Si layers on unpatterned Si wafers and on patterned regions of Si device wafers at temperatures of 900°C to 1000°C are investigated by TEM and by the fabrication of npn poly-Si emitter bipolar devices. Results for unpatterned wafers with F show i) a 950°C dopant drive-in anneal causes oxide break-up and regrowth after a time suitable for the fabrication of devices, ii) a pre-anneal, before the As implant, further enhances the break-up and regrowth and iii) there is an optimum F dose of 5×1015/cm2. Based on these results poly-Si emitter bipolar devices were fabricated using F=5×1015/cm2, a pre-anneal and a 900°C As drive-in anneal. The results establish quantitatively the relationship between the interface structures and the specific emitter resistance, i.e. with no F there is no break-up or regrowth and the emitter resistance is high (114Ωμm2) while with F there is break-up and regrowth and the emitter resistance is low (17Ωμm2).

On the noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise

1997 ◽  
Vol 41 (3) ◽  
pp. 441-445 ◽  
Author(s):  
H.A.W Markus ◽  
Ph Roche ◽  
T.G.M Kleinpenning
Keyword(s):  
Series Resistance ◽  
Bipolar Transistors ◽  
Current Noise ◽  
Base Current ◽  
Resistance Noise ◽  
Polysilicon Emitter
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