12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

1997 ◽  
Vol 44 (12) ◽  
pp. 2207-2212 ◽  
Author(s):  
T. Onai ◽  
E. Ohue ◽  
M. Tanabe ◽  
K. Washio
Keyword(s):  
Bipolar Transistor ◽  
Base Resistance

scholarly journals 300°C GaN/AlGaN Heterojunction Bipolar Transistor

1998 ◽  
Vol 3 ◽  
Author(s):  
Fan Ren ◽  
Cammy R. Abernathy ◽  
J. M. Van Hove ◽  
P. P. Chow ◽  
R. Hickman ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Hole Concentration ◽  
Dry Etching ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Resistance

A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.

Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 1987-1991 ◽  
Author(s):  
Yukihiro Kiyota ◽  
Toshiyuki Kikuchi ◽  
Katsuyoshi Washio ◽  
Taroh Inada
Keyword(s):  
Vapor Phase ◽  
Cutoff Frequency ◽  
Bipolar Transistor ◽  
Base Resistance

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor
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