2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)

2005 ◽

Author(s):

K. Nikawa ◽

S. Inoue

Keyword(s):

Failure Analysis ◽

Electrical Contact ◽

Analysis Technique ◽

Contact Failure

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Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922896 ◽

2002 ◽

Cited By ~ 8

Author(s):

S. Lombardo ◽

F. Crupi ◽

J.H. Stathis

Keyword(s):

Inversion Layer ◽

Gate Oxide ◽

Layer Density ◽

Thin Gate Oxide

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Analysis of via-void generation mechanism for giga-bit-scale DRAM

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922917 ◽

2002 ◽

Author(s):

D.H. Kim ◽

J.S. Park ◽

B.C. Kim ◽

S.C. Lee ◽

M.K. Bae ◽

...

Keyword(s):

Generation Mechanism

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An application-specific usage model for flash memory read disturb reliability

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922914 ◽

2002 ◽

Cited By ~ 1

Author(s):

T.S. Harp ◽

P.J. Kuhn ◽

J.M. Higman ◽

R.E. Paulsen ◽

B.E. Hornung

Keyword(s):

Flash Memory ◽

Application Specific

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Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922933 ◽

2002 ◽

Author(s):

S.E. Rauch ◽

G. La Rosa ◽

F.J. Guarin

Keyword(s):

Hot Carrier ◽

Hot Carrier Degradation

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Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922927 ◽

2002 ◽

Cited By ~ 12

Author(s):

J. Noguchi ◽

T. Saito ◽

N. Ohashi ◽

H. Ashihara ◽

H. Maruyama ◽

...

Keyword(s):

Cu Interconnects ◽

Low K

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Data retention failure in NOR flash memory cells

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922882 ◽

2002 ◽

Cited By ~ 2

Author(s):

W.H. Lee ◽

Dong-Kyu Lee ◽

Young-Min Park ◽

Keon-Soo Kim ◽

Kun-Ok Ahn ◽

...

Keyword(s):

Flash Memory ◽

Memory Cells ◽

Data Retention ◽

Nor Flash

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Reservoir modeling for electromigration improvement of metal systems with refractory barriers

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922923 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.J. Dion

Keyword(s):

Reservoir Modeling

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Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922894 ◽

2002 ◽

Cited By ~ 3

Author(s):

P.M. Lenahan ◽

J.J. Mele ◽

J.P. Campbell ◽

A.Y. Kang ◽

R.K. Lowry ◽

...

Keyword(s):

Experimental Evidence ◽

Dangling Bond ◽

Leakage Currents ◽

Direct Experimental Evidence

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A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922883 ◽

2002 ◽

Cited By ~ 16

Author(s):

A. Modelli ◽

F. Gilardoni ◽

D. Ielmini ◽

A.S. Spinelli

Keyword(s):

Conduction Mechanism ◽

Thin Oxide

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2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel nodestructive and non-electrical-contact failure analysis technique laser-SQUID microscopy

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

Analysis of via-void generation mechanism for giga-bit-scale DRAM

An application-specific usage model for flash memory read disturb reliability

Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

Data retention failure in NOR flash memory cells

Reservoir modeling for electromigration improvement of metal systems with refractory barriers

Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

Export Citation Format

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel nodestructive and non-electrical-contact failure analysis technique laser-SQUID microscopy

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

Analysis of via-void generation mechanism for giga-bit-scale DRAM

An application-specific usage model for flash memory read disturb reliability

Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

Data retention failure in NOR flash memory cells

Reservoir modeling for electromigration improvement of metal systems with refractory barriers

Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
Latest Publications