2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)

Novel nodestructive and non-electrical-contact failure analysis technique laser-SQUID microscopy

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922916 ◽

2005 ◽

Author(s):

K. Nikawa ◽

S. Inoue

Keyword(s):

Failure Analysis ◽

Electrical Contact ◽

Analysis Technique ◽

Contact Failure

Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922933 ◽

2002 ◽

Author(s):

S.E. Rauch ◽

G. La Rosa ◽

F.J. Guarin

Keyword(s):

Hot Carrier ◽

Hot Carrier Degradation

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922927 ◽

2002 ◽

Cited By ~ 12

Author(s):

J. Noguchi ◽

T. Saito ◽

N. Ohashi ◽

H. Ashihara ◽

H. Maruyama ◽

...

Keyword(s):

Cu Interconnects ◽

Low K

Analysis of via-void generation mechanism for giga-bit-scale DRAM

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922917 ◽

2002 ◽

Author(s):

D.H. Kim ◽

J.S. Park ◽

B.C. Kim ◽

S.C. Lee ◽

M.K. Bae ◽

...

Keyword(s):

Generation Mechanism

An application-specific usage model for flash memory read disturb reliability

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922914 ◽

2002 ◽

Cited By ~ 1

Author(s):

T.S. Harp ◽

P.J. Kuhn ◽

J.M. Higman ◽

R.E. Paulsen ◽

B.E. Hornung

Keyword(s):

Flash Memory ◽

Application Specific

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922896 ◽

2002 ◽

Cited By ~ 8

Author(s):

S. Lombardo ◽

F. Crupi ◽

J.H. Stathis

Keyword(s):

Inversion Layer ◽

Gate Oxide ◽

Layer Density ◽

Thin Gate Oxide

A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922883 ◽

2002 ◽

Cited By ~ 16

Author(s):

A. Modelli ◽

F. Gilardoni ◽

D. Ielmini ◽

A.S. Spinelli

Keyword(s):

Conduction Mechanism ◽

Thin Oxide

A reliability methodology for low temperature data retention in floating gate non-volatile memories

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922912 ◽

2002 ◽

Cited By ~ 9

Author(s):

P.J. Kuhn ◽

A. Hoefler ◽

T. Harp ◽

B. Hornung ◽

R. Paulsen ◽

...

Keyword(s):

Low Temperature ◽

Temperature Data ◽

Floating Gate ◽

Data Retention

Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922872 ◽

2002 ◽

Author(s):

Young Pil Kim ◽

Young Wook Park ◽

Joo Tae Moon ◽

S.U. Kim

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

High Density ◽

Bias Temperature Stress

Improving corrosion-resistance of silicon-glass micropackages using boron doping and/or self-induced galvanic bias

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922890 ◽

2002 ◽

Cited By ~ 2

Author(s):

B.H. Stark ◽

M.R. Dokmeci ◽

T.J. Harpster ◽

K. Najafi

Keyword(s):

Corrosion Resistance ◽

Boron Doping

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel nodestructive and non-electrical-contact failure analysis technique laser-SQUID microscopy

Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

Analysis of via-void generation mechanism for giga-bit-scale DRAM

An application-specific usage model for flash memory read disturb reliability

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

A reliability methodology for low temperature data retention in floating gate non-volatile memories

Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

Improving corrosion-resistance of silicon-glass micropackages using boron doping and/or self-induced galvanic bias

Export Citation Format

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel nodestructive and non-electrical-contact failure analysis technique laser-SQUID microscopy

Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

Analysis of via-void generation mechanism for giga-bit-scale DRAM

An application-specific usage model for flash memory read disturb reliability

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

A reliability methodology for low temperature data retention in floating gate non-volatile memories

Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

Improving corrosion-resistance of silicon-glass micropackages using boron doping and/or self-induced galvanic bias

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
Latest Publications