High-gain n-p-n and p-n-p InGaAs/InAlAs double-heterojunction bipolar transistors with InAs cap layers by molecular-beam epitaxy

1988 ◽  
Vol 35 (12) ◽  
pp. 2445-2446 ◽  
Author(s):  
C.K. Peng ◽  
T. Won ◽  
J. Chen ◽  
C. Litton ◽  
H. Morkoc
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
High Gain ◽  
Bipolar Transistors ◽  
Double Heterojunction

Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 869-871 ◽  
Author(s):  
H. Q. Zheng ◽  
K. Radhakrishnan ◽  
H. Wang ◽  
K. H. Yuan ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Double Heterojunction

High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 28 (12) ◽  
pp. 1083-1085 ◽  
Author(s):  
K. L. Lew ◽  
S. F. Yoon ◽  
H. Wang ◽  
S. Wicaksono ◽  
J. A. Gupta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
High Gain ◽  
Bipolar Transistors ◽  
Turn On
Sign in / Sign up

Export Citation Format

Share Document