Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy
1992 ◽
Vol 7
(3)
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pp. 425-428
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2006 ◽
Vol 24
(3)
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pp. 1564
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1996 ◽
Vol 14
(3)
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pp. 2225
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2007 ◽
Vol 28
(8)
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pp. 679-681
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2006 ◽
Vol 35
(2)
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pp. 266-272
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2000 ◽
2004 ◽
Vol 22
(5)
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pp. 2499
1988 ◽
Vol 35
(12)
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pp. 2445-2446
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