Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides

1992 ◽  
Vol 39 (6) ◽  
pp. 2114-2120 ◽  
Author(s):  
J.F. Conley ◽  
P.M. Lenahan ◽  
P. Roitman
Keyword(s):  
Charge Compensation ◽  
Electron Trap ◽  
Deep Electron Trap

Properties of the EL2 Level in Organometallic Ga1−xAlxAs

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Ben Cherifa ◽  
R. Azoulay ◽  
G. Guillot
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Quenching Effect ◽  
Deep Electron Trap ◽  
Transient Spectroscopy ◽  
First Time

ABSTRACTWe have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

Identification of a deep electron trap in GaP:N

Physica B+C ◽  
1983 ◽  
Vol 116 (1-3) ◽  
pp. 436-443 ◽  
Author(s):  
G. Ferenczi ◽  
T. Pavelka ◽  
M. Somogyi
Keyword(s):  
Electron Trap ◽  
Deep Electron Trap

Oxygen-Effect in Annealing of Recoil Damage in Cobalt Chelates-Tris-Acetyl-Acetone Co(III) and Bis-Salicylaldehyde Triethylenetetramine Co(III) Chloride

1964 ◽  
Vol 3 (3) ◽  
Author(s):  
Amar Nath ◽  
K. Annaji Rao ◽  
V. G. Thomas
Keyword(s):  
Kinetic Data ◽  
Isothermal Annealing ◽  
Cobalt Atom ◽  
Cobalt Complexes ◽  
Electron Trap ◽  
Oxygen Effect ◽  
Variable Depth ◽  
Deep Electron Trap ◽  
Annealing Kinetic ◽  
Cobalt Chelates

SummaryA marked 'oxygen effect' is observed for several cobalt complexes in thermal annealing. Kinetic data are reported for recoil damage, afterIt is suggested that during an isothermal annealing run electrons are released from variable depth traps, and interact with the metastable species (damage centres) formed by virtue of interaction of recoil cobalt atom with a chelate molecule. The adsorbed oxygen on the surface acts as deep electron trap and suppresses annealing. Once it is displaced by N

Nitrogen related deep electron trap in GaP

1983 ◽  
Vol 54 (7) ◽  
pp. 3902-3912 ◽  
Author(s):  
G. Ferenczi ◽  
P. Krispin ◽  
M. Somogyi
Keyword(s):  
Electron Trap ◽  
Deep Electron Trap
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