scholarly journals Deep electron trap level in semi-insulating GaAs

1985 ◽  
Vol 7 (5) ◽  
pp. 419-422
Author(s):  
A K Saxena
Keyword(s):  
Electron Trap ◽  
Trap Level ◽  
Deep Electron Trap

Enhanced Data Retention Characteristic on SOHOS-Type Nonvolatile Flash Memory with CF4-Plasma-Induced Deep Electron Trap Level

2019 ◽  
Vol 35 (2) ◽  
pp. 257-263 ◽  
Author(s):  
Chih Ren Hsieh ◽  
Yung-Yu Chen ◽  
Wen-Sin Lin ◽  
Gray Lin ◽  
Jen-Chung Lou
Keyword(s):  
Flash Memory ◽  
Electron Trap ◽  
Trap Level ◽  
Data Retention ◽  
Retention Characteristic ◽  
Deep Electron Trap

Properties of the EL2 Level in Organometallic Ga1−xAlxAs

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Ben Cherifa ◽  
R. Azoulay ◽  
G. Guillot
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Quenching Effect ◽  
Deep Electron Trap ◽  
Transient Spectroscopy ◽  
First Time

ABSTRACTWe have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (19) ◽  
pp. 192104 ◽  
Author(s):  
Y. S. Park ◽  
C. M. Park ◽  
C. J. Park ◽  
H. Y. Cho ◽  
Seung Joo Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Trap ◽  
Trap Level
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