Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

1995 ◽  
Vol 42 (6) ◽  
pp. 1935-1939 ◽  
Author(s):  
C. Dachs ◽  
F. Roubaud ◽  
J.-M. Palau ◽  
G. Bruguier ◽  
J. Gasiot ◽  
...  
Keyword(s):  
Single Event ◽  
Channel Power ◽  
Power Mosfets

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

1996 ◽  
Vol 43 (6) ◽  
pp. 2932-2937 ◽  
Author(s):  
G.H. Johnson ◽  
K.F. Galloway ◽  
R.D. Schrimpf ◽  
J.L. Titus ◽  
C.F. Wheatley ◽  
...  
Keyword(s):  
Cross Section ◽  
Physical Interpretation ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets

Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)

1992 ◽  
Vol 39 (6) ◽  
pp. 1605-1612 ◽  
Author(s):  
G.H. Johnson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
R. Koga
Keyword(s):  
Temperature Dependence ◽  
Space Application ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

1993 ◽  
Vol 40 (6) ◽  
pp. 1952-1958 ◽  
Author(s):  
F. Roubaud ◽  
C. Dachs ◽  
J.-M. Palau ◽  
J. Gasiot ◽  
P. Tastet
Keyword(s):  
Simulation Study ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets ◽  
2D Simulation

Mechanism for single-event burnout of power MOSFETs and its characterization technique

1992 ◽  
Vol 39 (6) ◽  
pp. 1698-1703 ◽  
Author(s):  
S. Kuboyama ◽  
S. Matsuda ◽  
T. Kanno ◽  
T. Ishii
Keyword(s):  
Single Event ◽  
Power Mosfets ◽  
Characterization Technique

scholarly journals Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

2021 ◽  
Author(s):  
Chao Peng ◽  
Zhifeng Lei ◽  
Ziwen Chen ◽  
Shaozhong Yue ◽  
Zhangang Zhang ◽  
...  
Keyword(s):  
Simulation Studies ◽  
Single Event ◽  
Power Mosfets ◽  
Radiation Induced

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 738-741
Author(s):  
Hiroshi Kono ◽  
Teruyuki Ohashi ◽  
Takao Noda ◽  
Kenya Sano
Keyword(s):  
Threshold Voltage ◽  
Drift Region ◽  
Single Event ◽  
Drain Voltage ◽  
Device Structure ◽  
Pin Diodes ◽  
Power Mosfets ◽  
Single Event Effect ◽  
Significant Difference ◽  
Avalanche Breakdown Voltage

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.

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