64°C continuous-wave operation of 1.5-μm vertical-cavity laser

1997 ◽  
Vol 3 (2) ◽  
pp. 359-365 ◽  
Author(s):  
N.M. Margalit ◽  
J. Piprek ◽  
S. Zhang ◽  
D.I. Babic ◽  
K. Streubel ◽  
...  
2000 ◽  
Vol 12 (11) ◽  
pp. 1438-1440 ◽  
Author(s):  
A. Karim ◽  
K.A. Black ◽  
P. Abraham ◽  
D. Lofgreen ◽  
Y.J. Chiu ◽  
...  

2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.


2000 ◽  
Vol 12 (10) ◽  
pp. 1316-1318 ◽  
Author(s):  
M. Brunner ◽  
K. Gulden ◽  
R. Hovel ◽  
M. Moser ◽  
J.F. Carlin ◽  
...  

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