Low-temperature continuous-wave operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers on Si substrates

1997 ◽  
Vol 9 (7) ◽  
pp. 872-874 ◽  
Author(s):  
T. Egawa ◽  
Y. Murata ◽  
T. Jimbo ◽  
M. Umeno
2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.


2018 ◽  
Vol 112 (11) ◽  
pp. 111106 ◽  
Author(s):  
Charles A. Forman ◽  
SeungGeun Lee ◽  
Erin C. Young ◽  
Jared A. Kearns ◽  
Daniel A. Cohen ◽  
...  

2012 ◽  
Vol 48 (9) ◽  
pp. 1107-1112 ◽  
Author(s):  
Toshikazu Onishi ◽  
Osamu Imafuji ◽  
Kentaro Nagamatsu ◽  
Masao Kawaguchi ◽  
Kazuhiko Yamanaka ◽  
...  

2010 ◽  
Vol 97 (7) ◽  
pp. 071114 ◽  
Author(s):  
Tien-Chang Lu ◽  
Shih-Wei Chen ◽  
Tzeng-Tsong Wu ◽  
Po-Min Tu ◽  
Chien-Kang Chen ◽  
...  

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