Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures

K. Shimomura; S. Arai; Y. Suematsu

doi:10.1109/3.123275

Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures

IEEE Journal of Quantum Electronics ◽

10.1109/3.123275 ◽

1992 ◽

Vol 28 (2) ◽

pp. 471-478 ◽

Cited By ~ 18

Author(s):

K. Shimomura ◽

S. Arai ◽

Y. Suematsu

Keyword(s):

Quantum Well ◽

Wavelength Range ◽

Optical Switches ◽

Electrooptic Effect ◽

Quantum Well Structures ◽

Low Dimensional

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A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) ◽

10.1109/cleoe.2003.1313606 ◽

2004 ◽

Author(s):

T. Mozume ◽

J. Kasai ◽

T. Simoyama ◽

A.V. Gopal ◽

H. Yoshida

Keyword(s):

Quantum Well ◽

Low Power ◽

Optical Switches ◽

Intersubband Transitions ◽

Quantum Well Structures ◽

All Optical

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An Editorial Perspective on: Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime, Physica E: Low-dimensional Systems and Nanostructures, Volume 85, January 2017, Pages 193–198

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2016.11.001 ◽

2017 ◽

Vol 85 ◽

pp. A1

Author(s):

Christian Schueller

Keyword(s):

Quantum Well ◽

Type Ii ◽

Quantum Well Structures ◽

Low Dimensional

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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00726-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 723-727

Author(s):

N Matsumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Piezoelectric Properties ◽

Quantum Well Structures ◽

Strained Quantum Well

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Bound and unbound exciton-electron states in II-VI quantum well structures with a 2DEG

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00531-9 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 818-821

Author(s):

P Christianen

Keyword(s):

Quantum Well ◽

Electron States ◽

Quantum Well Structures

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Optical nutation in GaAs Ga Al As quantum well structures

Journal of Modern Optics ◽

10.1080/095003496155102 ◽

1996 ◽

Vol 43 (8) ◽

pp. 1657-1669 ◽

Cited By ~ 1

Author(s):

SHARMILA BANERJEE and PRANAY K SEN

Keyword(s):

Quantum Well ◽

Quantum Well Structures

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RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1987596 ◽

1987 ◽

Vol 48 (C5) ◽

pp. C5-457-C5-461

Author(s):

C. J. SUMMERS ◽

K. F. BRENNAN ◽

A. TORABI ◽

H. M. HARRIS ◽

J. COMAS

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Development of MOVPE pulsed growth technique for increased efficiency InGaN/GaN multiple quantum well structures

10.15388/vu.thesis.21 ◽

2020 ◽

Author(s):

◽

Mantas Dmukauskas

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Growth Technique ◽

Quantum Well Structures

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Influence of Holes Capture Efficiency on Photoluminescence Temperature Depend-ence of n-AlGaAs/GaAs Quantum Well Structures

Proceedings of Universities ELECTRONICS ◽

10.24151/1561-5405-2018-23-4-327-334 ◽

2018 ◽

Vol 23 (4) ◽

pp. 327-334

Author(s):

N.G. Yaremenko ◽

◽

V.A. Strakhov ◽

M.V. Karachevtseva ◽

◽

...

Keyword(s):

Quantum Well ◽

Capture Efficiency ◽

Quantum Well Structures

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Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 HZ-3 MHZ and temperature range 77K - 324K

10.25148/etd.fi15101252 ◽

2002 ◽

Author(s):

Rolando Silvano Duran

Keyword(s):

Gallium Nitride ◽

Quantum Well ◽

Frequency Range ◽

Quantum Well Structures ◽

Temperature Range

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Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.02.037 ◽

2019 ◽

Vol 512 ◽

pp. 213-218 ◽

Cited By ~ 2

Author(s):

Wenxian Yang ◽

Yukun Zhao ◽

Yuanyuan Wu ◽

Xuefei Li ◽

Zhiwei Xing ◽

...

Keyword(s):

Quantum Well ◽

Quantum Well Structures ◽

Uv Emission ◽

Deep Uv

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Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures

A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions

An Editorial Perspective on: Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime, Physica E: Low-dimensional Systems and Nanostructures, Volume 85, January 2017, Pages 193–198

Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Bound and unbound exciton-electron states in II-VI quantum well structures with a 2DEG

Optical nutation in GaAs Ga Al As quantum well structures

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

Development of MOVPE pulsed growth technique for increased efficiency InGaN/GaN multiple quantum well structures

Influence of Holes Capture Efficiency on Photoluminescence Temperature Depend-ence of n-AlGaAs/GaAs Quantum Well Structures

Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 HZ-3 MHZ and temperature range 77K - 324K

Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures