Improved reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O

ABSTRACTA comparison study of the effectiveness of in-situ vapor/gas phase cleaning versus conventional wet RCA based cleaning has been performed. The effectiveness of the cleans were compared using Surface Photo-Voltage (SPV) measurements of the quality of a 70Å gate dielectric. Dielectrics grown in oxygen by Rapid Thermal Oxidation (RTO) were measured using SPV. The vapor/gas phase cleaning processes studied have three steps corresponding to the baths in a conventional RCA-based clean. A clean using O2 was used to clean the organic contaminants normally cleaned in the SC-1 bath, a C12 based step corresponded to the SC-2 solution, and an HF/alcohol etch was used to remove the oxide normally etched using buffered HF. It was seen that temperature control of the cleaning chamber walls is necessary to insure reproducible processes and reasonable pump down times. Measurements by SPV indicate that dielectrics grown after vapor-gas phase cleaning have lower interface trap densities than oxides grown after an RCA-based clean.

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Electrical properties of thin gate dielectric grown by rapid thermal oxidation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1312374 ◽

2000 ◽

Vol 18 (6) ◽

pp. 2986-2991 ◽

Cited By ~ 5

Author(s):

J. S. Lee ◽

S. J. Chang ◽

S. C. Sun ◽

S. M. Jang ◽

M. C. Yu

Keyword(s):

Electrical Properties ◽

Thermal Oxidation ◽

Gate Dielectric ◽

Rapid Thermal Oxidation

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Thin-gate dielectric films grown in N<sub>2</sub>O and O<sub>2</sub> using rapid thermal oxidation

10.1117/12.186063 ◽

1994 ◽

Author(s):

John M. Grant ◽

Tzu Y. Hsieh ◽

Victoria L. Shannon

Keyword(s):

Thermal Oxidation ◽

Gate Dielectric ◽

Dielectric Films ◽

Rapid Thermal Oxidation

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Rapid thermal oxidation of silicon for thin gate dielectric

Electronics Letters ◽

10.1049/el:19860475 ◽

1986 ◽

Vol 22 (13) ◽

pp. 694 ◽

Cited By ~ 11

Author(s):

N. Chan Tung ◽

Y. Caratini

Keyword(s):

Thermal Oxidation ◽

Gate Dielectric ◽

Rapid Thermal Oxidation

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Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

MRS Proceedings ◽

10.1557/proc-342-181 ◽

1994 ◽

Vol 342 ◽

Cited By ~ 4

Author(s):

S.C. Sun ◽

L.S. Wang ◽

F.L. Yeh ◽

T.S. Lai ◽

Y.H. Lin

Keyword(s):

Growth Rate ◽

Thermal Oxidation ◽

Charge Trapping ◽

Interface State ◽

Constant Current ◽

Mos Capacitor ◽

Rapid Thermal Oxidation ◽

Doped Silicon ◽

State Generation ◽

First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

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