Geomagnetically induced current model for the Namibian High Voltage Network

Author(s):  
Gideon Gope ◽  
Khoetage Dax ◽  
Sunday A. Reju ◽  
Pierre Cilliers
Space Weather ◽  
2020 ◽  
Vol 18 (8) ◽  
Author(s):  
T. Divett ◽  
D. H. Mac Manus ◽  
G. S. Richardson ◽  
C. D. Beggan ◽  
C. J. Rodger ◽  
...  

2017 ◽  
Vol 32 (3) ◽  
pp. 2183-2192 ◽  
Author(s):  
Maryam Kazerooni ◽  
Hao Zhu ◽  
Thomas J. Overbye ◽  
David A. Wojtczak

2021 ◽  
Vol 73 (1) ◽  
Author(s):  
Shinichi Watari ◽  
Satoko Nakamura ◽  
Yusuke Ebihara

AbstractWe need a typical method of directly measuring geomagnetically induced current (GIC) to compare data for estimating a potential risk of power grids caused by GIC. Here, we overview GIC measurement systems that have appeared in published papers, note necessary requirements, report on our equipment, and show several examples of our measurements in substations around Tokyo, Japan. Although they are located at middle latitudes, GICs associated with various geomagnetic disturbances are observed, such as storm sudden commencements (SSCs) or sudden impulses (SIs) caused by interplanetary shocks, geomagnetic storms including a storm caused by abrupt southward turning of strong interplanetary magnetic field (IMF) associated with a magnetic cloud, bay disturbances caused by high-latitude aurora activities, and geomagnetic variation caused by a solar flare called the solar flare effect (SFE). All these results suggest that GIC at middle latitudes is sensitive to the magnetospheric current (the magnetopause current, the ring current, and the field-aligned current) and also the ionospheric current.


2020 ◽  
Vol 1004 ◽  
pp. 290-298
Author(s):  
Camille Sonneville ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
Pascal Bevilacqua ◽  
Besar Asllani

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.


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