A low-voltage, low-power subthreshold CMOS voltage reference without resistors and high threshold voltage devices

Author(s):  
Jun Zhang ◽  
Yunling Luo ◽  
Qiaobo Wang ◽  
Jingjing Li ◽  
Zhuqian Gong ◽  
...  
2007 ◽  
Vol E90-C (10) ◽  
pp. 2044-2050 ◽  
Author(s):  
L. H.C. FERREIRA ◽  
T. C. PIMENTA ◽  
R. L. MORENO

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740069 ◽  
Author(s):  
Liangwei Dong ◽  
Yueli Hu

A novel low-voltage low-power CMOS voltage reference independent of temperature is presented in this design. After considering the combined effect of (1) a perfect suppression of the temperature dependence of mobility; (2) the compensation of the channel length modulation effect on the temperature coefficient, a temperature coefficient of 10 ppm/[Formula: see text]C is achieved. Moreover, by adopting the subthreshold MOSFETs, there are no resistors used in the proposed structure. Therefore, the maximum supply current measured at the maximum supply voltage is 70 nA and at 80[Formula: see text]C. The circuit can be used as a voltage reference for high performance and low power dissipation on a single chip.


2011 ◽  
Vol 32 (8) ◽  
pp. 085009 ◽  
Author(s):  
Honglai Wang ◽  
Xiaoxing Zhang ◽  
Yujie Dai ◽  
Yingjie Lü

Sign in / Sign up

Export Citation Format

Share Document